Capacitive ultrasonic sensor and manufacturing method thereof
An ultrasonic sensor, capacitive technology, applied in the measurement of ultrasonic/sonic/infrasonic waves, instruments, electrical devices, etc., can solve the problems of difficult IC circuit integration, difficult metal connection, and easy process preparation. The effect of short production cycle and few process steps
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[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0030] In the present invention, the capacitive ultrasonic sensor uses a low-resistance silicon substrate directly as the lower electrode, uses silicon dioxide as the insulating layer material, uses the top silicon of SOI as the diaphragm, and directly connects the SOI sheet and the silicon substrate with the cavity After bonding, the bottom silicon and buried oxide layer of SOI are etched away, and metal is deposited on the top silicon of SOI as the upper electrode, finally forming a capacitive ultrasonic sensor.
[0031] The invention is realized through the following technical solutions: based on the low-temperature silicon chip direct bonding technology, a capacitive ultrasonic sensor is prepared. The low-resistance s...
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