Transistor and tunable inductance

A technology of transistors and semiconductors, applied in the direction of transistors, variable inductors, variable inductors/transformers, etc., can solve problems such as low Q factor, unsuitable for high RF voltage and power level, nonlinear behavior, etc.

Active Publication Date: 2015-05-20
INFINEON TECH AG
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for tunable inductors, this approach often has problems, such as non-linear behavior, unsuitability for high RF voltage and power levels, or too low a Q factor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transistor and tunable inductance
  • Transistor and tunable inductance
  • Transistor and tunable inductance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] Various exemplary embodiments will now be described more fully with reference to the accompanying drawings, in which some exemplary embodiments are shown. In the figures, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0043] Thus, while further embodiments are capable of various modifications and alternative forms, some exemplary embodiments are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intention to limit exemplary embodiments to the particular forms disclosed, but on the contrary, exemplary embodiments cover all modifications, equivalents, and alternatives falling within the scope of this disclosure. Throughout the description of the drawings, the same numerals refer to the same or similar elements.

[0044] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source region, wherein a ratio between a width of the gate region and a length of the gate region exceeds 300.

Description

technical field [0001] Embodiments relate generally to inductance and / or capacitance, and more particularly, to implementations of inductance and / or capacitance using transistors. Background technique [0002] Radio frequency (RF) circuits, such as filters, resonators, and RF matching networks, typically require one or more inductors and one or more capacitors. Tunable RF circuits may further be desired to handle multi-band and / or multi-standard operation. For such a case, a tunable inductance and / or capacitance is required. To this day, tunable capacitors with a high figure of merit (Q factor) are available in technologies and methods such as varactors, MEMS, switched capacitors, and barium strontium titanate (BST) capacitors, among others. For tunable inductors, however, this approach often suffers from problems such as nonlinear behavior, unsuitability for high RF voltage and power levels, or too low Q-factor. SUMMARY OF THE INVENTION [0003] According to a first as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L27/088H01L27/04H01F29/00
CPCH01L23/5223H01L23/5227H01L27/0629H01L27/0688H01L2924/0002H01L2924/00H01F21/00H01F21/005H01L29/78H01L29/7817H01L27/0617
Inventor W·巴卡尔斯基
Owner INFINEON TECH AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap