Transistor and tunable inductance

Abstract

According to a first aspect embodiments provide a transistor including at least one gate region between at least one drain region and at least one source region, wherein a ratio between a width of the gate region and a length of the gate region exceeds 300.

Description

technical field [0001] Embodiments relate generally to inductance and / or capacitance, and more particularly, to implementations of inductance and / or capacitance using transistors. Background technique [0002] Radio frequency (RF) circuits, such as filters, resonators, and RF matching networks, typically require one or more inductors and one or more capacitors. Tunable RF circuits may further be desired to handle multi-band and / or multi-standard operation. For such a case, a tunable inductance and / or capacitance is required. To this day, tunable capacitors with a high figure of merit (Q factor) are available in technologies and methods such as varactors, MEMS, switched capacitors, and barium strontium titanate (BST) capacitors, among others. For tunable inductors, however, this approach often suffers from problems such as nonlinear behavior, unsuitability for high RF voltage and power levels, or too low Q-factor. SUMMARY OF THE INVENTION [0003] According to a first as...

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Problems solved by technology

However, for tunable inductors, this approach often has problems, such as non-linear behavior, unsuitability for high RF voltage and power levels, or too low a Q factor

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