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A metamaterial-based waveguide photomemristor

A technology of memristor and waveguide, which is applied in the field of waveguide memristor, can solve the problems of not being able to obtain memristor, and achieve the effect of rich functionality and functions

Active Publication Date: 2017-12-19
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, there is a problem in front of the researchers, whether it is possible to obtain the optical memristor

Method used

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  • A metamaterial-based waveguide photomemristor
  • A metamaterial-based waveguide photomemristor
  • A metamaterial-based waveguide photomemristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The structure of the photomemristor obtained in this embodiment is as follows figure 1 As shown, it consists of 7 optical memristors 2, 1 waveguide 1, transmission line 4 and filling medium 3;

[0034] Among them, the seven memristors 2 are all located in the waveguide 1, and are arranged in a matrix arrangement in the waveguide, and the distance between two adjacent memristors is the same; the remaining space in the waveguide 1 is filled with the filling medium 3;

[0035] The transmission line 4 is located outside the waveguide 1, and is respectively connected to both ends of the waveguide 1 by spot welding;

[0036] The material constituting the photomemristor is calcium titanate particles with a particle size of 1 μm-2 μm, a dielectric constant of 110, and a dielectric loss tangent of 0.002;

[0037] The material constituting the filling medium is polytetrafluoroethylene, a material transparent to the frequency band used by the photomemristor;

[0038] Each photom...

Embodiment 2

[0040] The optical memristor obtained in this embodiment is composed of an optical memristor, a waveguide 1, a transmission line and a filling medium;

[0041] Wherein, the optical memristor is located in the waveguide; the remaining space in the waveguide is filled with a filling medium;

[0042] The transmission line is located outside the waveguide and connected to both ends of the waveguide by spot welding;

[0043] The photomemristor is a copper ring body with a notch on the copper ring; the side length of the copper ring is 4mm, the width is 0.5mm, and the notch is 0.3mm. The gap part is equivalent to the capacitance C, and the other metal parts are equivalent to the inductance L;

[0044] The material constituting the filling medium is polytetrafluoroethylene which is transparent to the operating frequency band of the photomemristor.

Embodiment 3

[0046] The performance of the photomemristor obtained in Examples 1 and 2 can be checked using a vector network analyzer. The vector network analyzer has the functions of power scanning, time scanning and linear frequency scanning, and can well detect the performance of the prepared photomemristor. .

[0047] Wherein, the photomemristors obtained in Examples 1 and 2 all have the shape of figure 2 , image 3 , Figure 4 and Figure 5 the response to.

[0048] figure 2 The initial state of the memristor is a state of low transmittance, and it undergoes a transition from low transmittance to high transmittance during the process of increasing the incident power, and maintains this state of transmittance until a certain reverse power is applied. High transmittance to low transmittance reset.

[0049] and figure 2 on the contrary, image 3 A schematic diagram of the photomemristor response results in a state of high initial transmittance is given in .

[0050] Figure ...

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Abstract

The invention discloses a waveguide type memristor based on metamaterial. The memristor includes at least one memristor body, a waveguide, a transmission line and a packing medium, wherein the memristor body is positioned in the waveguide, the residual space in the waveguide is filled with the packing medium; the transmission line is positioned outside the waveguide, and connected with two ends of the waveguide respectively. The transmissivity of the waveguide type memristor varies under the loading of an electromagnetic field, and has memory effect. The waveguide type memristor can be used as an optical element, to allow the existing optical path design to be more multifunctional, and to allow optical product, such as vector network analyzer and the like, to develop to the direction with richer functions.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and relates to a waveguide optical memristor based on metamaterials. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley proposed the concept of memristor based on the logical integrity of circuit theory. As the name implies, a memristor is a device or system that has a memory effect on resistance, and is considered to be the fourth basic passive circuit element besides resistors, capacitors, and inductors. In 2008, Strukov et al. of Hewlett-Packard Co., Ltd. in TiO doped with oxygen vacancies 2 Obvious memristive behavior was observed in the film. Under the action of an external electric field, oxygen ions moved along the direction of the electric field, resulting in a change in the ratio of the doped region to the non-doped region inside the material, thus showing the memristive behavior. Since then, memristors have received widespread...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/122
CPCG02F1/011
Inventor 周济吴红亚
Owner TSINGHUA UNIV
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