Anisotropic conductive film and semiconductor device using same

An anisotropic, conductive film technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as reduced adhesion, fracture of anisotropic conductive film, and reduced film pre-compression properties. Effects of ensuring bonding force, improving connection reliability, and ensuring shape stability

Active Publication Date: 2017-06-20
KUKDO ADVANCED MATERIALS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if the external stress applied to the anisotropic conductive film exceeds the allowable maximum stress, the anisotropic conductive film cannot relieve the internal stress and cracks occur, resulting in a decrease in properties such as adhesion and fracture of the anisotropic conductive film
In addition, when pre-compression is performed at reduced pressure, there is a problem that the film is stretched and the pre-compression properties of the film are reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anisotropic conductive film and semiconductor device using same
  • Anisotropic conductive film and semiconductor device using same
  • Anisotropic conductive film and semiconductor device using same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0149] The method of preparing an anisotropic conductive film according to an embodiment of the present invention is not particularly limited, and any specific method known in the art may be used without limitation.

[0150] No special equipment or equipment is required to form the anisotropic conductive film. For example, the anisotropic conductive film can be prepared by: dissolving a binder resin in an organic solvent; adding other components to the binder resin; stirring the components for a predetermined period of time; coating the mixture forming an appropriate thickness on the release film, for example, 10 microns to 50 microns; and drying the mixture for a time sufficient to volatilize the organic solvent, thereby providing an anisotropic conductive film having a single-layer structure.

[0151] Here, any typical organic solvent can be used without limitation. In this embodiment, the foregoing procedure is repeated two or more times, thereby providing an anisotropic c...

example 1

[0178] Preparation of the first insulating layer composition

[0179] Using a C mixer, 30% by weight of the first binder resin (Mitsubishi Co., Ltd., product name: E1256), 23% by weight of the first epoxy resin (Adike Corporation, product name: EP-4000S) and 30% by weight of the second epoxy resin (Adeco, product name: EP-4010S) was mixed and stirred for 5 minutes. Next, after adding 5% by weight of cationic curing agent (Sanshin Chemical Co., Ltd., product name: SI-60L) to the mixture, 7 nanometer silica (Degussa, product name: R812) and silane coupling (Shin-Etsu Co., Ltd., product name: KBM403) was further added to the mixture, followed by stirring using a C mixer for 1 minute (so that the temperature of the mixture did not exceed 60° C.), thereby forming a first insulating layer composition.

[0180] Preparation of Conductive Layer Composition

[0181] The conductive layer composition was prepared in the same manner as the preparation of the first insulating layer compos...

example 2

[0188] An anisotropic conductive film was prepared in the same manner as in Example 1 by adjusting the amounts of the corresponding components in the second insulating layer as listed in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

An anisotropic conductive film and a semiconductor device using the same are disclosed. The anisotropic conductive film has a three-layer structure including a first insulating layer, a conductive layer, and a second insulating layer, wherein the stress-strain curve of the anisotropic conductive film has a value greater than 0 and less than or equal to 0.2 kg as expressed by Equation 1 below The slope A of force / (mm2 %), and the maximum stress (Smax) at or above 0.4 kgf / mm2: slope (A, unit: kgf / (mm2%)) =(1 / 2Smax‑S0) / x‑‑‑(1), where Smax: maximum stress, x: strain (%) at half (1 / 2) of the maximum stress, S0: stress at 0 strain. The anisotropic conductive film of the present invention has improved pre-compression properties, and can promote main compression by adjusting the slope A and the maximum stress so that the initial properties of the anisotropic conductive film before curing are controlled.

Description

technical field [0001] The present invention relates to an anisotropic conductive film and a semiconductor device using the anisotropic conductive film. Background technique [0002] In general, anisotropic conductive film (ACF) refers to a film-like adhesive prepared by dispersing conductive particles in a resin such as epoxy resin. The anisotropic conductive film is composed of a polymer layer having electrical anisotropy and adhesion, and exhibits conductive properties in the thickness direction of the film and insulating properties in the surface direction of the film. [0003] When the anisotropic conductive film is placed between circuit boards and thermally compressed under certain conditions, the circuit terminals of the circuit boards are electrically connected to each other via conductive particles, and the insulating layer fills the spaces between adjacent circuit terminals to The conductive particles are isolated from each other, providing high insulation as wel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09J7/00C09J163/00C09J171/12C09J11/04C09J9/02H01B5/14
CPCH01L2924/15788H01L2224/271H01L2224/2939H01L2224/29455H01L2224/29439H01L24/13H01L24/16H01L24/27H01L24/32H01L24/81H01L24/83H05K3/323H01L2224/13023H01L2224/16148H01L2224/16238H01L2224/2919H01L2224/2929H01L2224/293H01L2224/29339H01L2224/29344H01L2224/29347H01L2224/29355H01L2224/29387H01L2224/32145H01L2224/32225H01L2224/81193H01L2224/83101H01L2224/83204H01L2224/83851H01L2224/83862H01L2924/07811H01L2224/27003H01L2224/29444H01L2224/81903H01L24/29H01L2224/29083H01L2924/00H01L2924/0665H01L2924/053H01L2924/05442H01L2924/00014H01L2924/014H01L2924/00012C09J7/29B32B27/08C09J9/02C09J2203/326H01L2021/60022H01L2021/60015C09J2301/16C09J2301/314C09J2301/312C09J163/00
Inventor 金智软姜炅求朴憬修孙秉勤申颍株郑光珍黄慈英
Owner KUKDO ADVANCED MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap