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Method for recovering gallium from waste gallium nitride-based LEDs

A light-emitting diode, gallium nitride-based technology, applied in the fields of optics, improvement of process efficiency, instruments, etc., can solve problems such as environmental pollution and waste of resources

Active Publication Date: 2015-04-29
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for enriching and recovering scattered metal gallium from waste gallium nitride-based light-emitting diodes, so that gallium can be enriched and recovered, and at the same time, non-metallic components and common valuable metals in waste light-emitting diodes (copper, aluminum, etc.) are separated and recycled, which helps to solve the waste of resources and potential environmental pollution of waste gallium nitride-based light-emitting diodes, and realize the recovery, regeneration and resource treatment of waste gallium nitride-based light-emitting diodes

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  • Method for recovering gallium from waste gallium nitride-based LEDs

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Embodiment 1

[0035]Firstly, waste GaN-based light-emitting diodes were subjected to nitrogen pyrolysis, the final pyrolysis temperature was 400° C., and the pyrolysis time was 60 minutes. After the pyrolysis is over, the pyrolysis gas, pyrolysis oil and pyrolysis residue are collected respectively, and the pyrolysis gas and pyrolysis oil are recycled for other purposes. After the pyrolysis slag is crushed, the particle size of the charcoal residue is 0.7-1.0mm, and it is sieved through a 18-mesh sieve, and the charcoal residue is recovered under the sieve. The sieved material is ground and then sieved through a 40-mesh sieve. The copper or silver-plated aluminum metal frame is recovered on the sieve, and the light-emitting diode chip enrichment body is formed under the sieve. Put the chip enriched body into the crucible, and then put the crucible into the vacuum furnace. After the vacuum furnace is sealed, start the vacuum system to pump air, so that the vacuum degree of the vacuum furnac...

Embodiment 2

[0038] Firstly, waste gallium nitride-based light-emitting diodes were subjected to nitrogen pyrolysis, the pyrolysis final temperature was 500° C., and the pyrolysis time was 30 minutes. After the pyrolysis is over, the pyrolysis gas, pyrolysis oil and pyrolysis residue are collected respectively, and the pyrolysis gas and pyrolysis oil are recycled for other purposes. After the pyrolysis slag is crushed, the particle size of the charcoal residue is 0.5-0.8mm, and it is sieved through an 18-mesh sieve, and the charcoal residue is recovered under the sieve. The sieved material is ground and then sieved through a 40-mesh sieve. The copper or silver-plated aluminum metal frame is recovered on the sieve, and the light-emitting diode chip enrichment body is formed under the sieve. Put the chip enriched body into the crucible, and then put the crucible into the vacuum furnace. After the vacuum furnace is sealed, start the vacuum system to pump air, so that the vacuum degree of the...

Embodiment 3

[0040] Firstly, waste gallium nitride-based light-emitting diodes were subjected to nitrogen pyrolysis, the pyrolysis final temperature was 600° C., and the pyrolysis time was 10 min. After the pyrolysis is over, the pyrolysis gas, pyrolysis oil and pyrolysis residue are collected respectively, and the pyrolysis gas and pyrolysis oil are recycled for other purposes. After the pyrolysis slag is crushed, the particle size of the charcoal residue is 0.4-0.6mm, and it is sieved through an 18-mesh sieve, and the charcoal residue is recovered under the sieve. The sieved material is ground and then sieved through a 40-mesh sieve. The copper or silver-plated aluminum metal frame is recovered on the sieve, and the light-emitting diode chip enrichment body is formed under the sieve. Put the chip enriched body into the crucible, and then put the crucible into the vacuum furnace. After the vacuum furnace is sealed, start the vacuum system to pump air, so that the vacuum degree of the vac...

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Abstract

The invention discloses a method for recovering gallium from waste gallium nitride-based LEDs (Light Emitting Diodes). The method comprises the following steps: performing pyrolysis, crushing-screening and grinding-screening on the waste gallium nitride-based LEDs, so as to obtain a chip concentrate of waste gallium nitride-based LEDs; performing the vacuum metallurgy separation on the gallium-containing chip concentrate to recover the elemental gallium. The method for recovering gallium from waste gallium nitride-based LEDs does not only effectively recover gallium in the waste gallium nitride-based LEDs, but also performs resourceful treatment on non-metallic components and other common metals during recovery. The method for recovering gallium from waste gallium nitride-based LEDs has prominent advantages in the reduction of environmental pollution and the improvement of resource utilization, and has characteristics of low cost, high efficiency, no pollution and the like.

Description

technical field [0001] The invention relates to a method for recovering scattered metal gallium from waste gallium nitride-based light-emitting diodes, and belongs to the technical field of metal recovery, regeneration and resource utilization in electronic waste. Background technique [0002] Light-emitting diode (LED) is one of the commonly used electronic component diodes. It is a device that can convert electrical energy into light energy and belongs to solid-state light sources. At present, light-emitting diodes have been widely used in scientific research and production fields, mainly including general lighting, landscape decoration lighting, large-screen display, backlight display, traffic signal display, car lights, road lighting, etc. Among them, gallium nitride-based light-emitting diodes have become the most potential lighting method, and their research and application have received extensive attention and strong support from governments of various countries. At p...

Claims

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Application Information

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IPC IPC(8): H01L33/00C25C1/22C22B7/00
CPCH01L33/0075Y02P10/20
Inventor 詹路夏发发
Owner EAST CHINA NORMAL UNIV
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