Manufacturing method of high-power rectification tube core

Abstract

The invention discloses a manufacturing method of a high-power rectification tube core. The method comprises the steps of marking at least one face of a silicon wafer; conducting aluminum impurity doping on the surface of the silicon wafer through the aluminum pre-deposition technology; corroding the cathode face of the silicon wafer, and removing aluminum impurities on the cathode face of the silicon wafer; conducting aluminum impurity deep-junction diffusion on the anode face of the silicon wafer. By means of the manufacturing method, surface defects and micro cracks of the silicon wafer can be prevented from being generated, and therefore the finished product rate and the long-term reliability of the high-power rectification tube core can be improved.

Description

technical field [0001] The invention relates to the technical field of chip manufacturing, in particular to a method for manufacturing a high-power rectifier tube core. Background technique [0002] Due to the extremely high current passing through the high-power device during operation, a very small amount of defects may cause device failure. Therefore, in the manufacturing process, the quality requirements for raw materials are very high. If there are many defects on the surface of the raw material, the leakage current of the device will be too large and the blocking voltage will be too low. Therefore, after the silicon single crystal rod is cut into silicon single crystal wafers, fine grinding must be performed, and chemical etching is also required after grinding to further remove defects on the grinding surface. The silicon single wafer grinding process has extremely strict requirements on the grinding equipment. It is necessary to ensure that there are no obvious defe...

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Problems solved by technology

[0004] However, the single-side grinding process used in the above-mentioned manufacturing method will cause a large number of defects or tiny cracks on the surface of the silicon wafer, and the defects will cause high-power rectifier tube core leakage current and low reverse blocking voltage. The yield of the core. During the working process of the core, the tiny cracks will continue to increase under the effect of thermal expansion and contraction, which will eventually lead to component failure and reduce the long-term reliability of the core.

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