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Patterning etching method of transparent conducting electrode and patterning transparent conducting electrode

A transparent conductive electrode and patterning technology, which is applied to the conductive layer, circuit, and electrical components on the insulating carrier, can solve the problems of insufficient wettability between the etching solution and the protective layer, high requirements for equipment, and difficult cost control. Achieve the effects of improving electrode transparency, low cost, and low etching speed

Active Publication Date: 2015-04-29
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The non-chemical etching method requires high equipment and equipment, and the cost is not easy to control
Existing chemical etching methods are relatively toxic, and often cannot etch micron and nanoscale fine structures due to insufficient wettability between etching solution and protective layer

Method used

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  • Patterning etching method of transparent conducting electrode and patterning transparent conducting electrode
  • Patterning etching method of transparent conducting electrode and patterning transparent conducting electrode
  • Patterning etching method of transparent conducting electrode and patterning transparent conducting electrode

Examples

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Effect test

Embodiment 1

[0034] First, the aqueous dispersion of silver nanowires is scraped onto a glass substrate to form a thin film of silver nanowires, which is used as an electrode to be patterned. Then a commercial photoresist film was prepared on it by spin coating method, and a post-baking treatment was performed at 100° C. for 1.5 minutes to make an electrode to be exposed. After cooling, cover the mask plate with "PKU" pattern on it, and carry out ultraviolet exposure for 2 minutes to make the electrode to be developed. After completion, it was immersed in 1% NaOH aqueous solution for 10 seconds to develop, rinsed with water, and dried with nitrogen gas to prepare an electrode to be etched. After drying, put it into an iodine cylinder and seal it, let it react with gaseous iodine for 1 minute, take it out, wash off the photoresist in acetone, rinse it with water, and blow it dry with nitrogen. figure 2 It is an optical microscope photo of a silver nanowire sample patterned by a thorough e...

Embodiment 2

[0037]First, the isopropanol dispersion of silver nanowires was spin-coated on a glass substrate to form a thin film of silver nanowires, which was used as an electrode to be patterned. Then a commercial photoresist film was prepared on it by spin coating method, and a post-baking treatment was performed at 100° C. for 1.5 minutes to make an electrode to be exposed. After cooling, cover it with a mask plate and perform ultraviolet exposure for 2 minutes to make an electrode to be developed. After completion, it was immersed in 1% NaOH aqueous solution for 10 seconds to develop, rinsed with water, and dried with nitrogen gas to prepare an electrode to be etched. Then soak it in 1.2 mg / mL methylamine iodide (CH 3 NH 3 I) Etch in isopropanol solution for 5 minutes, rinse with water, and dry with nitrogen. After drying, the photoresist was washed off in acetone, rinsed with water, and dried with nitrogen. Finally, a transparent conductive electrode patterned by a shadowless et...

Embodiment 3

[0039] First, the isopropanol dispersion of silver nanowires is sprayed on a glass substrate to form a thin film of silver nanowires as an electrode to be patterned. Then, a commercial photoresist film was prepared on it by spin coating method, and a post-baking treatment was performed at 100° C. for 1.5 min to make an electrode to be exposed. After cooling, cover it with a mask plate with a grid pattern, and perform ultraviolet exposure for 2 minutes to make an electrode to be developed. After completion, it was immersed in 1% NaOH aqueous solution for 10 seconds to develop, rinsed with water, and dried with nitrogen gas to prepare an electrode to be etched. Then put it into an iodine tank and seal it, let it react with gaseous iodine for 1 minute, take it out, wash off the photoresist in acetone, rinse it with water, and dry it with nitrogen. Then immerse it in 20% amino-terminated polyether isopropanol solution for 30 seconds to remove the etching products, rinse it with c...

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Abstract

The invention discloses patterning etching method of a transparent conducting electrode and a patterning transparent conducting electrode. The method comprises the steps that an electrode to be patterned is manufactured; a patterning protecting layer is prepared on the electrode; the electrode is placed in etching liquid or gas for etching; and the electrode is placed in washing liquid, and etching products and the protecting layer are washed off. The method is used for carrying out latticed patterning on metal nanowires, and the latticed patterning transparent conducting electrode is manufactured. Metal or a metal nanowire film is subjected to quick, low-cost, safe and low-toxic chemical etching through gas or low-concentration etching liquid, complete etching can be achieved, shadowless etching can be achieved, safety and low-toxic performance are achieved, etching speed is high, and effect is obvious in practical application. A prepared latticed patterning transparent conducting electrode comprehensive nanowire and a nanometer lattice transparent electrode have the advantages that under the premise that conductivity loss is very small, transparency is greatly improved, and performance is good.

Description

technical field [0001] The invention belongs to the field of transparent conductive electrodes, and relates to transparent conductive electrodes of metals, metal grids or metal nanowires, in particular to a patterned etching method for transparent conductive electrodes and a patterned transparent conductive electrode. Background technique [0002] At present, the materials of transparent electrodes mainly include ITO (indium tin oxide), carbon nanotubes, graphene, conductive polymers, metal grids, metal nanowires, and the like. ITO transparent electrodes occupy most of the market share due to their high transparency and high conductivity. However, ITO electrodes need to be prepared by vacuum vapor deposition and contain the rare element indium, so the cost is high, and ITO is brittle and cannot be used in flexible devices. Therefore, people began to look for other transparent electrode materials, and metal nanowires were favored because of their lower cost, higher performan...

Claims

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Application Information

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IPC IPC(8): H01B13/00H01B5/14B82Y30/00B82Y40/00
Inventor 朱瑞吴疆胡芹阙星陆龚旗煌
Owner PEKING UNIV
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