Method and device for growth ofnitride materials at low temperature through laser assistance

Abstract

The invention discloses a method and device for growth of nitride materials at low temperature through laser assistance. The method comprises the steps that precursor steam of a non-nitrogen element and active nitrogen precursor gas are conveyed to a substrate material at the temperature ranging from 250 DEG C to 800 DEG C in a reaction chamber; a laser beam with the wavelength equal to the length of active nitrogen molecular bond resonance waves is utilized for acting on active nitrogen gas to enable laser energy to be directly coupled to active nitrogen gas molecules; and breakage of NH keys is accelerated, sufficient active nitrogen is provided, the non-nitrogen element chemically react with the active nitrogen, the III group of nitrogen film coating materials are deposited, and sustained action is carried out until a sediment covers a whole substrate and reaches the needed thickness. The device comprises a vacuum reaction cavity, a gas pre-mixing cavity, a wavelength tunable laser device and a moving mechanism. On the basis of improvement in the active nitrogen utilization rate and reduction of the environmental pollution, large-area, rapid and high-quality growth of the nitrogen film coating materials under the low-temperature environment can be achieved.

Description

technical field [0001] The invention belongs to the technical field of nitride vapor deposition, and relates to depositing nitride such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN) or indium nitride on the surface of a substrate under the assistance of laser light (InN) and other nitride film methods and equipment, the main features are that it can realize the low-temperature deposition process of the film and greatly reduce the consumption of nitrogen source (such as ammonia NH 3 usage of). Background technique [0002] Among nitrides, Group III nitride semiconductors, such as wide bandgap semiconductor materials such as GaN, AlGaN, AlN or InN, are ideal for preparing optoelectronic devices such as semiconductor light-emitting diodes (LEDs) and semiconductor lasers (LDs) in the blue to ultraviolet band. preferred material. Group III nitride-based materials are widely used in the manufacture of high-performance optoelectronic devices, ...

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Problems solved by technology

However, the cost of these lattice-matched substrate materials is too high to be mass-produced and commercialized

[0004] Secondly, in the current deposition process of nitride-based thin film materials, the nitrogen in the film layer is easy to decompose during growth, and the excessively high ambient temperature will easily aggravate the volatilization of nitrogen, resulting in the loss of nitrogen components in the nitride-based thin film, leaving a large amount of nitrogen in the film. Nitrogen vacancies, so the nitride film has a high background electron concentration, making subsequent P-type doping difficult

In addition, ammonia gas (NH 3 ) utilization efficiency is extremely low, and ammonia gas (NH 3 ), leading to high growth costs, long cycle times, high energy consumption, and serious environmental pollution of nitride-based thin film materials

[0005] Due to these unfavorable factors brought about by the high temperature environment, the quality and efficiency of nitride film growth are greatly reduced. The current deposition rate of MOVCD synthesized gallium nitride film is only 4 μm / h, and the deposition rate of MBE technology is only 1 μm / h.

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