Integrated circuit copper CMP composition and preparation method thereof

Abstract

The invention relates to an integrated circuit copper CMP composition and a preparation method thereof, belongs to the technical fields of micro-electronics auxiliary materials and ultra-precision machining technology, and particularly relates to a polishing composition with a catalytic action. The composition comprises deionized water, combined abrasive particles containing catalysts, an oxidizing agent, a complexing agent, a corrosion inhibitor, an interface reaction assistant, a pH conditioning agent and a surface active agent, and the pH value of a polishing liquid composition is 2.0-5.5. The polishing abrasive particles are combined with the catalysts, so that the polishing abrasive particles have catalytic activity while reaching a mechanical grinding action, have the capacity of catalytic oxidation, and also double as a mechanical action and a chemical action; the polishing surface quality can be kept, and a copper chemical mechanical polishing composition realizing quick removal can be realized.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and in particular relates to a polishing composition with catalytic effect. Background technique [0002] With the continuous development of VLSI, the feature size is continuously reduced, while the chip area is continuously increased, and the length of interconnection lines is increased, resulting in a sharp increase in impedance. Line-to-line capacitance continues to rise as the distance between adjacent interconnect lines decreases. An important means to reduce the interconnect resistance is to reduce the resistivity of the interconnect metal and enhance the anti-electromigration properties of the interconnect metal. Copper, as a metal with low resistivity, has been applied and has replaced aluminum as the mainstream interconnection technology in VLSI manufacturing. [0003] Because the etching of copper is very difficult,...

AI Technical Summary

Problems solved by technology

The pressure is one of the most important parameters of CMP. The material removal rate of CMP is proportional to the downforce. Generally, reducing the downforce will directly reduce the polishing rate of CMP.

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