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LED chip and manufacturing method thereof

A technology of LED chips and multiple quantum well layers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low luminous efficiency of LED chips, and achieve the effects of improving compound efficiency, increasing energy band height, and enhancing binding capacity.

Active Publication Date: 2015-03-18
BYD SEMICON CO LTD
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Problems solved by technology

[0005] In order to improve the technical problem of low luminous efficiency of the existing LED chip, the present invention provides an LED chip and a preparation method thereof, which can improve the recombination efficiency of electrons and holes in a multi-quantum well layer, and improve the luminous efficiency of the LED chip

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  • LED chip and manufacturing method thereof
  • LED chip and manufacturing method thereof

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Embodiment Construction

[0022] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0023] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or...

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Abstract

The invention provides an LED chip and a manufacturing method thereof. The LED chip comprises a substrate, a buffer layer, an N-type layer, a multiple quantum well layer, a P-type layer and a conducting layer, wherein the buffer layer, the N-type layer, the multiple quantum well layer, the P-type layer and the conducting layer are sequentially formed on the substrate, the multiple quantum well layer is formed by alternatively stacking an InxGa(1-x)N well layer and an InaAlbGacN barrier layer, In components of the single InxGa(1-x)N well layer are grandually reduced from the lower side to the upper side, and In components of the single InaAlbGacN barrier layer are gradually increased from the lower side to the upper side. According to the LED chip, the In components of the well layer and the barrier layer are gradually changed, and the quantum well energy band is regulated so that electron and hole separation caused by a polarization field is eliminated, and the compounding efficiency of electron and hole radiation is improved, so that the performance of the LED chip is improved.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to an LED chip and a preparation method. Background technique [0002] LED (Light Emitting Diode) is a junction-type electroluminescent semiconductor device that can convert electrical signals into optical signals. GaN-based light-emitting diodes, as solid-state light sources, are known for their high efficiency, long life, energy saving and environmental protection, and small size. Such advantages have become the focus of R&D and industry attention in the field of international semiconductors and lighting. [0003] At present, the InGaN / GaN multi-quantum well structure is mostly used as the light-emitting layer in the gallium nitride-based light-emitting diode structure, where InGaN is the potential well layer, GaN is the barrier layer, and the light-emitting region is the InGaN potential well layer; due to the gap between InGaN and GaN There is a relatively serious lattice mismatch ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/06H01L33/00
CPCH01L33/0075H01L33/06H01L33/325
Inventor 谢春林
Owner BYD SEMICON CO LTD
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