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Iron-group carbide nano crystal-graphene nanoribbon composite material as well as preparation and application thereof

A graphene nanobelt and iron group carbide technology, applied in the field of carbon nanomaterials, achieves the effects of uniform distribution, high degree of crystallization and simplified process

Inactive Publication Date: 2015-02-18
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no report on the growth of iron group carbide nanocrystals directly from iron group elements by hot filament-CVD (hot filament-CVD) on graphene vertical nanoribbons, let alone iron group carbide nanocrystals-graphene nanoribbons. Reported as Hydrogen Evolution Catalyst and Oxygen Reduction Catalyst

Method used

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  • Iron-group carbide nano crystal-graphene nanoribbon composite material as well as preparation and application thereof
  • Iron-group carbide nano crystal-graphene nanoribbon composite material as well as preparation and application thereof
  • Iron-group carbide nano crystal-graphene nanoribbon composite material as well as preparation and application thereof

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Experimental program
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Effect test

Embodiment 1

[0045] Embodiment 1: The CVD furnace used in the present invention is a hot wire-CVD furnace. The iron group element is Fe.

[0046] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. 9.5nm Al was sequentially evaporated by E-Beam Evaporation 2 o 3 , 1.2nm Fe.

[0047] (2) At a furnace temperature of 750°C, the gas flow rates are H 2 :200sccm, C 2 h 2 : 2 sccm, H through deionized water 2 Under the conditions of 200sccm, total air pressure of 25.5Torr, single tungsten wire, and 30W power, place the silicon wafer made in (1) 0.4cm in front of the tungsten wire, and set the total power of the tungsten wire to 0, the total air pressure was adjusted to 6.4 Torr, and the vertical array growth of single-walled carbon nanotubes was completed after 15 minutes of reaction.

[0048] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C, and the gas flow to H 2 :200sccm, C...

Embodiment 2

[0052] Embodiment 2: The CVD furnace used in the present invention is a hot wire-CVD furnace. The iron group element is Fe.

[0053] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. Evaporate 10nm Al sequentially by E-Beam Evaporation 2 o 3 , 1.0nm Fe.

[0054] (2) At a furnace temperature of 750°C, the gas flow rates are H 2 :190sccm, C 2 h 2 : 2.2 sccm, H through deionized water 2 The temperature is 210sccm, the total air pressure is 25Torr, the heating wire is a single tungsten wire, and the power is 32W. Place the silicon chip made in (1) 0.5cm in front of the tungsten wire, and set the power of the tungsten wire to 0 after 30s of reaction. The total air pressure was adjusted to 6.4 Torr, and the vertical array growth of single-walled carbon nanotubes was completed after 15 minutes of reaction.

[0055] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C,...

Embodiment 3

[0059] Embodiment 3: The CVD furnace used in the present invention is hot wire-CVD. The iron group element is Fe.

[0060] (1) Silicon wafers were ultrasonically cleaned with methanol, acetone and isopropanone for 15 minutes, N 2 blow dry. Evaporate 11nm Al sequentially by E-Beam Evaporation 2 o 3 , 1nm Fe.

[0061] (2) At a furnace temperature of 760°C, the gas flow rates are H 2 :190sccm, C 2 h 2: 1.8 sccm, H through deionized water 2 Under the conditions of 210sccm, total air pressure of 25.2Torr, single tungsten wire, and 35W power, place the silicon wafer made in (1) 0.5cm in front of the tungsten wire, and set the total power of the tungsten wire to 0, the total air pressure was adjusted to 6.4 Torr, and the vertical array growth of single-walled carbon nanotubes was completed after 15 minutes of reaction.

[0062] (3) Replace a single tungsten wire with 4 tungsten wires, set the furnace temperature to 700°C, and the gas flow to H 2 :200sccm, CH 4 : 0.5 sccm, ...

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Abstract

The invention discloses an iron-group carbide nano crystal-graphene nanoribbon composite material as well as preparation and application thereof, and belongs to the technical field of carbon nano materials. Graphene nanoribbon arrays are vertically grown on silicon wafers, iron-group carbide nano crystal is arranged at the top ends of the graphene nanoribbon arrays, and the iron-group carbide nano crystal is one of Fe3C, Co3C and Ni3C. The preparation comprises the following steps: firstly, vertically growing the graphene nanoribbon arrays on the silicon wafers, subsequently, evaporating iron-group elements at the top ends of the graphene nanoribbon arrays, and finally producing the iron-group carbide nano crystal. The iron-group carbide nano crystal-graphene nanoribbon composite material disclosed by the invention can be used in hydrogen evolution catalysis and oxidation reduction catalysis after the silicon wafers at the bottom are removed.

Description

technical field [0001] The invention belongs to the technical field of carbon nanomaterials, and in particular relates to a preparation method based on iron group carbide nanocrystal-graphene nanoribbon composite material and its application in hydrogen evolution catalysis and oxygen reduction catalysis. Background technique [0002] Hydrogen energy has a high combustion value, is clean and pollution-free, is rich in resources, and has a wide range of applications. The development of hydrogen energy is of great significance for alleviating energy and environmental problems in today's society. Hydrogen production by splitting water is the most important way to obtain hydrogen energy on a large scale. For the hydrogen evolution reaction, the noble metal element (Pt) has excellent electrocatalytic hydrogen evolution activity in water splitting, and its hydrogen evolution onset potential is low, but it is expensive and difficult to apply on a large scale. Therefore, it is necess...

Claims

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Application Information

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IPC IPC(8): C23C28/00C30B25/00C30B29/36B01J27/22B82Y30/00B82Y40/00
CPCB01J27/22B01J2203/068B82Y30/00B82Y40/00C23C28/322C23C28/341C30B25/00C30B29/36
Inventor 郭霞范修军李冲刘巧莉董建刘白
Owner BEIJING UNIV OF TECH
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