SONOS (silicon oxide nitride oxide silicon) flash memory device and compiling method thereof

Abstract

The invention provides an SONOS (silicon oxide nitride oxide silicon) flash memory device and a compiling method thereof. The SONOS flash memory device comprises a substrate of a cylinder structure and a grid electrode which wraps the middle of the substrate, wherein a source terminal and a drain terminal are respectively arranged at two ends of the substrate, the grid electrode comprises a first silicon gate and a second silicon gate which are parallel, a first oxidation layer is arranged between the first silicon gate and the second silicon gate, and a second oxidation layer arranged on the substrate, a silicon nitride layer arranged on the second oxidation layer and used to store electric charges and a third oxidation layer arranged on the silicon nitride layer are sequentially arranged between the second silicon gate and the substrate. The above structure of the SONOS flash memory device can restrain short channel effects and resist threshold voltage drifts, and simultaneously can effectively reduce the critical size of the SONOS flash memory device. The compiling method of the SONOS flash memory device assists in movement of thermion by adjusting voltage of the grid electrode and the drain terminal, provides sufficient oxidation layer crossing energy to complete compiling, improves compiling efficiency of the SONOS flash memory device, and reduces compiling electric current power consumption.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits and its manufacture, in particular to a SONOS flash memory device and its compiling method. Background technique [0002] With the miniaturization and miniaturization of semiconductor storage devices, the traditional polysilicon second silicon gate storage is difficult to adapt to the development requirements of future storage because of the excessive thickness of the stack and the high requirements on the insulation of the tunnel oxide layer. Recently, SONOS (Polysilicon-Oxide-Nitride-Oxide-Silicon, Silicon-Oxide-Nitride-Oxide-Silicon) non-volatile memory devices based on silicon nitride with excellent insulating properties are known as the first Two-silicon gate memory has stronger charge storage capacity, easy miniaturization and simple process, and has been re-emphasized. [0003] SONOS, the English acronym for Silicon-Oxide-Nitride-Oxide-Silicon, is a non-volatile memory that...

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Problems solved by technology

[0006] However, the structure of the flash memory device disclosed in the above-mentioned documents has the following problems: in order to ensure a high channel hot electron generation rate, a high voltage must be applied to the drain terminal, and at the same time, in order to ensure a high hot electron injection efficiency, a high Voltage

Therefore, it is necessary to apply a high voltage to both the drain and the gate, which brings the problems of low channel hot electron injection efficiency and large current power consumption.

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