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Preparation method of zinc oxide-based transparent conducting film glass

A transparent conductive film, zinc oxide-based technology, applied in the direction of coating, etc., can solve the problems of difficult control and complicated process, and achieve the effect of easy operation, simple process and high conductivity

Pending Publication Date: 2015-01-28
CHINA TRIUMPH INT ENG +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reaction substances involved in this method require instantaneous decomposition reaction at high temperature, which is not easy to control, and the process is complex

Method used

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  • Preparation method of zinc oxide-based transparent conducting film glass
  • Preparation method of zinc oxide-based transparent conducting film glass
  • Preparation method of zinc oxide-based transparent conducting film glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] In this embodiment, the glass substrate is 3.2mm ultra-clear glass; using the first liquid phase roll coater, a silicon dioxide interlayer film is plated on the glass surface with tetraethyl orthosilicate hydrolysis precursor; Then, the mixed solution of zinc acetate and aluminum nitrate is coated on the glass surface by using the second liquid-phase roller coater reactor to form a zinc oxide-doped aluminum (AZO) transparent conductive film. The post-treatment temperature of the glass substrate is 510° C., and the post-treatment time is 10 min.

[0037] It has been determined that the thickness of the middle layer is 86nm, the thickness of the AZO transparent conductive layer is 700nm, the sheet resistance of the film layer is 7.2Ω / □, and the carrier concentration of the film layer is 7.9×10 20 / cm 3 , The visible light transmittance of AZO transparent conductive film glass is 83%. Therefore, it can be seen that the AZO transparent conductive film glass has good optic...

Embodiment 2

[0039]In the present embodiment, the glass substrate is 4mm ultra-clear glass; utilize the first liquid-phase roller coater to coat a layer of silicon dioxide interlayer film on the glass surface with the hydrolysis precursor solution of methyl orthosilicate; then The mixed solution of zinc sulfate and tin tetrachloride is coated on the glass surface by using the second liquid-phase roller coater reactor to form a zinc oxide-doped tin (TZO) transparent conductive film. The post-treatment temperature of the glass substrate is 550° C., and the post-treatment time is 13 minutes.

[0040] After measurement, the thickness of the middle layer is 100nm, the thickness of the TZO transparent conductive layer is 682nm, the sheet resistance of the film layer is 7.5Ω / □, and the carrier concentration of the film layer is n is 7.6×10 20 / cm 3 , The visible light transmittance of TZO transparent conductive film glass is 80%. Therefore, it can be seen that the TZO transparent conductive fil...

Embodiment 3

[0042] In this embodiment, the glass substrate is 4mm ultra-clear glass; using the first liquid phase roller coater, a layer of orthosilicate and ethyl orthosilicate mixed hydrolysis precursor is coated on the glass surface The silicon dioxide interlayer thin film; then use the second liquid-phase roll coating machine reactor to coat the mixed solution of zinc chloride and ammonium fluoride on the glass surface to form a zinc oxide fluorine-doped (FZO) transparent conductive film. The post-treatment temperature of the glass substrate is 520° C., and the post-treatment time is 15 minutes.

[0043] After measurement, the thickness of the middle layer is 96nm, the thickness of the FZO transparent conductive layer is 580nm, the sheet resistance of the film layer is 8.9Ω / □, and the carrier concentration of the film layer is n is 6.8×10 20 / cm 3 , The visible light transmittance of FZO transparent conductive film glass is 89%. Therefore, it can be seen that the FZO transparent con...

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Abstract

The invention provides a preparation method of zinc oxide-based transparent conducting film glass. The preparation method of the zinc oxide-based transparent conducting film glass comprises the following steps: (a) preparing a zinc oxide liquid precursor; (b) doping a doping precursor in the zinc oxide liquid precursor to form a doped zinc oxide liquid precursor; (c) coating the doped zinc oxide liquid precursor on a glass substrate by utilizing a liquid phase roller coating method; and (d) carrying out heat treatment on the glass substrate coated with an oxide film, so as to form the zinc oxide-based transparent conducting film glass. By changing a formula of a precursor mixed liquor, quality of a film layer can be controlled, and functions of the film layer can be improved. The preparation method of the zinc oxide-based transparent conducting film glass has the advantages that a technology is simple, equipment cost and raw material cost are low, operation is easy, and industrial mass production can be facilitated; a zinc oxide-based doped transparent conducting oxide film is plated on a moving glass surface by adopting the appropriate liquid precursor, and the obtained transparent conducting film has the characteristics of high transmittance and high conductivity and can be widely applied to thin-film solar cells.

Description

technical field [0001] The invention relates to a method for preparing zinc oxide-based transparent conductive film glass, in particular to coating a zinc oxide-doped transparent conductive oxide film on the surface of moving glass by using a liquid phase roller coating method, and the film is mainly used in the fields of thin film solar cells and the like . Background technique [0002] With the energy crisis and the increasingly serious environmental pollution caused by traditional energy sources, the development of renewable clean energy has become one of the major strategic issues in the world. Solar energy is an inexhaustible clean energy source. Therefore, research and development Utilizing solar energy has become an energy strategic decision for sustainable development of governments around the world. Among them, amorphous silicon (a-Si:H) thin-film solar cells occupy the primary position in thin-film solar cells because of their low cost and easy large-area realizat...

Claims

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Application Information

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IPC IPC(8): C03C17/23
CPCC03C17/3411C03C2217/213C03C2217/29
Inventor 金良茂王芸倪嘉王萍萍操芳芳
Owner CHINA TRIUMPH INT ENG
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