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Phosphorus gettering process of silicon chips

A phosphorus gettering and silicon wafer technology, applied in sustainable manufacturing/processing, photovoltaic power generation, electrical components, etc., can solve problems affecting the photoelectric conversion efficiency of solar cells, etc., to improve short-wave response, improve uniformity, and improve phosphorus absorption The effect of miscellaneous craftsmanship

Inactive Publication Date: 2015-01-21
无锡尚品太阳能电力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are micro-defects and metal impurities in silicon wafers as the base material for making solar cells. These impurities and defects introduce multiple deep energy levels in the silicon forbidden band and become the recombination center of minority carriers, which seriously affects the photoelectric conversion of solar cells. efficiency

Method used

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  • Phosphorus gettering process of silicon chips
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  • Phosphorus gettering process of silicon chips

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A silicon wafer phosphorus gettering process, the steps are:

[0026] (1) Deposition: put the silicon chip with the suede surface into the diffusion furnace, feed nitrogen, phosphorus oxychloride and oxygen, and heat up for diffusion; this process is divided into three stages (divided into eleven steps in total), each The step time, temperature and the amount of various gases are introduced in detail as follows:

[0027] The first diffusion stage (a~e):

[0028] a. The first step of diffusion: the diffusion time is 10s, the temperature at the furnace mouth is 835°C, the temperature in the furnace is 800°C, the temperature at the end of the furnace is 800°C, the amount of nitrogen gas is 13000mL, and the input of phosphorus oxychloride and oxygen The volume is 0mL;

[0029] b. The second step of diffusion: the diffusion time is 600s, the temperature of the furnace mouth is 800°C, the temperature in the furnace is 800°C, the temperature of the furnace tail is 800°C, the...

Embodiment 2

[0043] A silicon wafer phosphorus gettering process, the steps are:

[0044] (1) Deposition: put the silicon chip with the suede surface into the diffusion furnace, feed nitrogen, phosphorus oxychloride and oxygen, and heat up for diffusion; this process is divided into three stages (divided into eleven steps in total), each The step time, temperature and the amount of various gases are introduced in detail as follows:

[0045] The first diffusion stage (a~e):

[0046] a. The first step of diffusion: the diffusion time is 30s, the temperature at the furnace mouth is 855°C, the temperature in the furnace is 820°C, the temperature at the end of the furnace is 810°C, the amount of nitrogen gas is 15000mL, phosphorus oxychloride and oxygen are introduced The volume is 0mL;

[0047] b. The second step of diffusion: the diffusion time is 800s, the temperature at the furnace mouth is 850°C, the temperature in the furnace is 830°C, the temperature at the end of the furnace is 810°C,...

Embodiment 3

[0061] A silicon wafer phosphorus gettering process, the steps are:

[0062] (1) Deposition: put the silicon chip with the suede surface into the diffusion furnace, feed nitrogen, phosphorus oxychloride and oxygen, and heat up for diffusion; this process is divided into three stages (divided into eleven steps in total), each The step time, temperature and the amount of various gases are introduced in detail as follows:

[0063] The first diffusion stage (a~e):

[0064] a. The first step of diffusion: the diffusion time is 30s, the temperature at the furnace mouth is 855°C, the temperature in the furnace is 820°C, the temperature at the end of the furnace is 810°C, the amount of nitrogen gas is 15000mL, phosphorus oxychloride and oxygen are introduced The volume is 0mL;

[0065] b. The second step of diffusion: the diffusion time is 800s, the temperature at the furnace mouth is 850°C, the temperature in the furnace is 830°C, the temperature at the end of the furnace is 810°C,...

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Abstract

The invention relates to a phosphorus gettering process of silicon chips, and belongs to the field of photovoltaic technologies. The phosphorus gettering process comprises the steps of putting sueded silicon chips into a diffusion furnace, supplying nitrogen, phosphorus oxychloride and oxygen, heating and carrying out diffusion. The diffusion is carried out by three stages which are a first step of diffusion, a second step of diffusion and annealing, and the silicon chips are cooled to the room temperature after deposition. According to the invention, heavily doped dead layers can be effectively decreased, and the average minority carrier lifetime of the silicon chips is greatly prolonged; and after the processes including etching, PECVD, silk screen sintering and the like are finished according to the normal process of a cell piece, the average transformation efficiency of the made cell piece is further improved, and the cell piece has better electrical performance parameters.

Description

technical field [0001] The invention relates to a phosphorus gettering process for silicon wafers, in particular to a phosphorus doping process for silicon wafers in the manufacture of solar cells, and belongs to the field of photovoltaic technology. Background technique [0002] With the development of industrialization, non-renewable energy sources such as electricity, coal, and oil are frequently running out. Energy issues have increasingly become a bottleneck restricting the development of the international society and economy. More and more countries have begun to implement the "Sunshine Plan" to develop solar energy resources and seek economic development. new impetus. Driven by the huge potential of the international photovoltaic market, the solar cell manufacturing industries of various countries are not only scrambling to invest huge sums of money to expand production, but also to establish their own research and development institutions to research and develop new ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/223
CPCH01L31/186Y02E10/50Y02P70/50
Inventor 杜正兴陈烈军丁志强
Owner 无锡尚品太阳能电力科技有限公司
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