Molecular sensor based on virtual buried nanowire

Abstract

The present invention provides a method and a system based on a multi-gate filed effect transistor for sensing molecules in a gas or liquid sample. The said FET transistor comprises dual gate lateral electrodes (and optionally a back gate electrode) located on the two sides of an active region, and a sensing surface on top of the said active region. Appling voltages to the lateral gate electrodes, creates a conductive channel in the active region, wherein the width and the lateral position of the said channel can be controlled. Enhanced sensing sensitivity is achieved by measuring the channels conductivity at a plurality of positions in the lateral direction. The use of an array of the said FTE for electronic nose is also disclosed.

Description

[0001] Related applications [0002] This application asserts the benefit under 35 U.S.C. §119(e) of U.S. Provisional Patent Application No. 61 / 604,041, filed February 28, 2012, the contents of which are hereby incorporated by reference as if reproduced in their entirety . technical field [0003] In some embodiments of the invention, the invention relates to a semiconductor chemical sensor, and more particularly, but not exclusively, to a field effect transistor based gas sensor. Background technique [0004] Commercially available gas sensors include infrared sensors, toxic gas sensors, and catalytic combustion sensors, all of which are sold by City Technology, Ltd.; and by FIS, Inc. .) metal oxide gas detectors for sale. Sensors sold by City Tech, for example, are described at www.citytech.com, and sensors sold by Figaro, for example, are described at www.figarosensor.com. Gas sensors that could be less expensive to manufacture and / or had greater sensitivity and / or gr...

AI Technical Summary

Problems solved by technology

However, the fabrication of commercial gas sensors based on such nanowires is currently not feasible because the fabrication of these structures using, for example, the VLS method is not amenable to high-volume manufacturing (HVM)

Alternatively, high-volume CMOS fabrication of nanowires could be realized in the future, but at the same time the cost increases substantially, even by several orders of magnitude

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