A piezoelectric driven and detected miniature hemispherical resonant gyroscope and its preparation method
A technology of hemispherical resonant gyroscope and piezoelectric drive, applied in gyroscope/steering sensing equipment, gyroscope effect for speed measurement, instrument and other directions, can solve problems such as gyroscope influence, reduce processing requirements and energy consumption requirements, and improve accuracy performance and the effect of avoiding the influence of parasitic capacitance
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Embodiment 1
[0036] As shown in Figure 2(a) and Figure 2(b), the present embodiment provides a piezoelectrically driven and detected miniature hemispherical resonant gyroscope, including:
[0037] a single crystal silicon substrate 1;
[0038] a central fixed support column 2;
[0039] A miniature hemispherical harmonic oscillator 3;
[0040] a common electrode 4;
[0041] Eight thin-film piezoelectric bodies 5;
[0042] Eight evenly distributed signal electrodes 6;
[0043] Among them, the single crystal silicon substrate 1 and the micro-hemispherical resonator 3 are connected through the central fixed support column 2; the common electrode 4 has the same shape as the micro-hemispherical resonator 3, and is located between the micro-hemispherical resonator 3 and the thin-film piezoelectric body 5; The thin-film piezoelectric body 5 has the same shape as the signal electrode 6 and is located between the common electrode 4 and the signal electrode 6 .
[0044] In this embodiment, the m...
Embodiment 2
[0051] Such as Figure 1(a)-Figure 1(i) As shown, the present embodiment provides a preparation method of the piezoelectrically driven and detected miniature hemispherical resonant gyroscope, comprising the following steps:
[0052]The first step, as shown in Fig. 1(a), is to clean the single crystal silicon substrate 1, apply glue on the single crystal silicon substrate 1, perform photolithography, development, sputtering mask layer, glue removal, and isotropic Etching and removing the mask layer to obtain a hemispherical groove with a radius of 300-700 μm on the single crystal silicon substrate 1;
[0053] In the second step, as shown in Figure 1(b), on the basis of the first step, the thermal oxidation method is used to grow the silicon dioxide layer, glue coating, photolithography, development, and partial etching of the silicon dioxide layer to obtain a radius SiO2 sacrificial layer for 15-40 μm circular grooves;
[0054] The third step, as shown in Figure 1(c), deposits...
Embodiment 3
[0063] Basically the same as embodiment 1 and embodiment 2, the difference is:
[0064] The gyroscope prepared in this embodiment: the materials of the central fixed support column 2 and the micro-hemispherical resonator 3 are doped polysilicon or doped diamond, and the micro-hemispherical resonator 3 simultaneously serves as the micro-hemispherical resonator 3 and common electrode 4, no need to make additional common electrode 4;
[0065] Therefore, the third step in the preparation method of this embodiment: deposit doped polysilicon or doped diamond on the basis of the second step; remove the fourth step in the preparation method described in Example 2, and directly proceed from the fifth step to the first step nine steps. Other operations are the same as in Example 2.
[0066] The gyroscope in the present invention is manufactured by combining MEMS bulk silicon processing technology and surface silicon processing technology, which is a novel processing technology.
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