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High-strength IGBT high-power module encapsulation silica gel and encapsulation process thereof

A module packaging, high-power technology, used in adhesives, polymer adhesive additives, adhesive additives, etc., can solve the problem of poor weather resistance and impact resistance, inability to module compatibility and adhesion, easy water permeability and oxygen permeability, etc. problems, to achieve the effect of low water absorption and oxygen absorption, good compatibility and adhesion strength, and good weather resistance

Inactive Publication Date: 2014-12-03
YANTAI DEBANG ADVANCED SILICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with the current silica gel is that it has poor weather resistance and impact resistance, cannot be well compatible and adhered to the module, and is easily permeable to water and oxygen, resulting in rapid aging of the module. It can only be used for low-to-medium frequency devices.
However, the IGBT power module packaging silicone that can meet the requirements of high power, high frequency, high voltage and high current has not been reported yet.

Method used

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  • High-strength IGBT high-power module encapsulation silica gel and encapsulation process thereof
  • High-strength IGBT high-power module encapsulation silica gel and encapsulation process thereof
  • High-strength IGBT high-power module encapsulation silica gel and encapsulation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Preparation of component A: at room temperature, weigh methyl vinyl polysiloxane resin such as structural formula (1), wherein, a=0.6, b=1.2, take 40 parts; methyl vinyl silicone oil such as structural formula (3) , wherein e=50, get 50 parts; impact modifier, such as structural formula (7), wherein, x=5, y=5, z=10, get 5 parts; weather resistance agent, such as structural formula (8), wherein, m=4, n=8, get 1 part; adhesion agent, such as structural formula (9), wherein, h=5, get 3 parts; catalyst, platinum-methyl vinyl polysiloxane complex, platinum content It is 3000ppm, take 1 portion, add it to the planetary high-speed disperser one by one, stir thoroughly for 2 hours, mix evenly, vacuumize, fill and seal and store.

[0067] Preparation of component B: at room temperature, weigh methyl vinyl polysiloxane resin such as structural formula (2), wherein, c=0.7, d=1.3, take 50 parts; methyl vinyl silicone oil such as structural formula (4) f=30, g=60, take 30 parts; cr...

Embodiment 2

[0070] Preparation of component A: at room temperature, weigh methyl vinyl polyoxane resin such as structural formula (2), wherein, c=1.2, d=0.4, take 50 parts; methyl vinyl silicone oil such as structural formula (4), Wherein f=200, g=100, get 23 parts; Impact modifier, such as structural formula (7), wherein, x=20, y=20, z=50, get 15 parts; Weather resistance agent, such as structural formula (8) , wherein, m=10, n=20, get 5 parts; adhesion agent, such as structural formula (9) wherein, h=20, get 6 parts; Catalyst, platinum-methyl vinyl polysiloxane complex, The platinum content is 7000ppm, take 0.1 part, add it to the planetary high-speed disperser in turn, stir thoroughly for 2 hours, mix evenly, vacuumize, fill and seal and store.

[0071] Preparation of component B: at room temperature, weigh methyl vinyl polysiloxane resin such as structural formula (1), wherein, a=1.2, b=0.6, take 30 parts; methyl vinyl silicone oil such as structural formula (3) Wherein e=200, take 5...

Embodiment 3

[0074] Preparation of component A: at room temperature, weigh methyl vinyl polyoxane resin such as structural formula (1), wherein, a=1.0, b=0.8, take 45 parts; methyl vinyl silicone oil such as structural formula (3), Wherein e=100, get 40 parts; Impact modifier, such as structural formula (7), wherein, x=12, y=14, z=22, get 10 parts; Weather resistance agent, such as structural formula (8), wherein, m =8, n=12, get 3 parts; Adhesion force agent, such as structural formula (9), wherein, h=10, get 5 parts; Catalyst, platinum-methylvinylpolysiloxane complex, platinum content is 5000ppm, take 0.5 parts, add to the planetary high-speed disperser one by one, stir thoroughly for 2 hours, mix evenly, vacuumize, fill and seal and store.

[0075] Preparation of component B: at room temperature, weigh 20 parts of methyl vinyl polysiloxane resin as shown in structural formula (1), wherein, a=1.0, b=0.8; weigh as shown in structural formula (2) 20 parts of methyl vinyl polysiloxane resi...

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PUM

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Abstract

The invention provides high-strength IGBT high-power module encapsulation silica gel and an encapsulation process thereof. The encapsulation gel is high in strength, can resist outside impact, is excellent in weather resistance and has high compatibility and adhesion strength with an IGBT power module. An effect of protecting and insulating the IGBT power module is effectively achieved. The encapsulation requirement of the high-power high-frequency high-voltage large-current IGBT power module is met. The silica gel provided by the invention is a two-component heating and curing adhesive and is prepared by mixing a component A and a component B according to a ratio of 1:1.

Description

technical field [0001] The invention relates to the technical field of silicone encapsulation silica gel, in particular to a high-strength IGBT high-power module encapsulation silica gel and an encapsulation process thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transisitor) is the English abbreviation of insulated gate bipolar transistor. It is a composite device of MOSFET and bipolar transistor. The power MOSFET is easy to drive, simple to control, high switching frequency, and low on-voltage of the power transistor. The on-state current is large and the loss is small. Achieve dominance in medium and high frequency applications. As a new type of power device, the biggest feature of IGBT is energy saving and high energy efficiency, and it has been widely used in the energy saving market. [0003] In China's IGBT industry, breakthroughs have been made in mid-range technology, which has basically formed from chip design to chip packaging. At present, wh...

Claims

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Application Information

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IPC IPC(8): C09J183/07C09J183/05C09J11/08H01L23/29
CPCH01L2224/48091H01L2224/48227H01L2924/13055H01L2924/13091H01L2924/00014H01L2924/00
Inventor 陈维张丽娅王建斌陈田安
Owner YANTAI DEBANG ADVANCED SILICON MATERIALS
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