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Perovskite solar battery based on CdSe nanocrystals and preparation method

A technology of nanocrystals and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as device efficiency gaps, and achieve the effects of reducing recombination, reducing production costs, and high photoelectric energy conversion efficiency

Inactive Publication Date: 2014-11-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, although some people use ZnO, TiO 2 Materials such as PEDOT:PSS (poly3,4-ethylenedioxythiophene / polystyrene sulfonate) are used as electron / hole transport layers, but the obtained device efficiency is still far from the theoretical value

Method used

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  • Perovskite solar battery based on CdSe nanocrystals and preparation method
  • Perovskite solar battery based on CdSe nanocrystals and preparation method
  • Perovskite solar battery based on CdSe nanocrystals and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0049] CdSe quantum dots were prepared by thermal injection method with an average particle size of 6.7 nm, figure 2 Its transmission electron microscope picture.

[0050] A solution was prepared by dissolving 35 mg of CdSe quantum dots in 1 ml of a mixed solvent of chlorobenzene and pyridine.

[0051] The transparent conductive glass etched with strip-shaped indium tin oxide (ITO, cathode) on the surface was ultrasonically oscillated for 15 minutes with aqueous detergent solution, deionized water, acetone and isopropanol, dried, and then treated with oxygen plasma 15 minutes; Then spin-coat the CdSe nanocrystal solution on the indium tin oxide (ITO) cathode with glass as the substrate, spin-coat for 40 seconds at a speed of 2000rpm (rev / min), and spin-coat twice under the above conditions to obtain a thickness of 50 nm CdSe film, 140 o C annealed for 10 min; then, spin-coated CH on the electron transport layer of the CdSe nanofilm at 2500 rpm 3 NH 3 I 3 / PbI 2 The mixe...

Embodiment 2

[0054] CdSe quantum dots were prepared by thermal injection method with an average particle size of 6.7 nm, as figure 2 shown.

[0055] A solution was prepared by dissolving 35 mg of CdSe quantum dots in 1 ml of a mixed solvent of chlorobenzene and pyridine.

[0056] The transparent conductive glass etched with strip-shaped indium tin oxide (ITO, cathode) on the surface was ultrasonically oscillated for 15 minutes with aqueous detergent solution, deionized water, acetone and isopropanol, dried, and then treated with oxygen plasma 15 minutes; Then spin-coat the CdSe nanocrystal solution on the indium tin oxide (ITO) cathode with glass as the substrate, spin-coat for 40 seconds at a speed of 2000rpm (rev / min), and spin-coat twice under the above conditions to obtain a thickness of 50 nm CdSe film, 100 o C annealed for 10 min; then, spin-coated CH on the electron transport layer of the CdSe nanofilm at 2500 rpm 3 NH 3 I 3 / PbI 2 The mixed solution, the molar ratio of which...

Embodiment 3

[0059] CdSe quantum dots were prepared by thermal injection method with an average particle size of 6.7 nm, as figure 2 shown.

[0060] A solution was prepared by dissolving 35 mg of CdSe quantum dots in 1 ml of a mixed solvent of chlorobenzene and pyridine.

[0061] The transparent conductive glass etched with strip-shaped indium tin oxide (ITO, cathode) on the surface was ultrasonically oscillated for 15 minutes with aqueous detergent solution, deionized water, acetone and isopropanol, dried, and then treated with oxygen plasma 15 minutes; Then spin-coat the CdSe nanocrystal solution on the indium tin oxide (ITO) cathode with glass as the substrate, spin-coat for 40 seconds at a speed of 2000rpm (rev / min), and spin-coat twice under the above conditions to obtain a thickness of 50 nm CdSe film, 120 o C annealed for 10 min; then, spin-coated CH on the electron transport layer of the CdSe nanofilm at 2500 rpm 3 NH 3 I 3 / PbI 2 The mixed solution, the molar ratio of which...

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Abstract

The invention discloses a perovskite solar battery based on CdSe nanocrystals and a preparation method. The perovskite solar battery sequentially comprises an anode, a hole transport layer, a perovskite photosensitive layer, an electron transport layer, a cathode and a substrate from top to bottom. The electron transport layer is a film which is prepared through the CdSe nanocrystals. Compared with electron transport layer material ZnO and TiO2 commonly used at present, the CdSe nanocrystals are high in migration rate and are well matched with the perovskite photosensitive layer in energy level, electrons generated by the perovskite photosensitive layer can be effectively transported to the anode, and therefore it is guaranteed that the solar battery is high in photoelectric energy conversion efficiency. In addition, the preparation method of the CdSe nanocrystals is simple and easy to implement, the film can be manufactured directly through a low-temperature solution machining method, the cost is low, and the method is suitable for industrialized production.

Description

technical field [0001] The invention relates to a solar cell and a preparation method, in particular to a perovskite solar cell based on CdSe nano crystals and a preparation method. Background technique [0002] With the sharp increase in oil prices and the increasing depletion of mineral resources, solar energy has attracted more and more attention because of its inexhaustible, unrestricted geographical, clean and safe advantages. Solar cells, which convert solar energy into electrical energy based on the photovoltaic effect, are one of the main ways to utilize solar energy. However, currently commercialized solar cells basically use silicon or inorganic semiconductors as the photosensitive layer material, and the preparation process is complicated and the cost is high. On the other hand, although solar cells using organic semiconductor materials as the photosensitive layer have the advantages of solution processing, large-area flexible devices, and low cost, they also hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0264H01L31/04H01L31/18
CPCH10K30/10H10K2102/00Y02E10/549Y02P70/50
Inventor 陈红征王玲傅伟飞施敏敏顾卓伟范聪成杨曦李寒莹
Owner ZHEJIANG UNIV
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