Preparation method of low temperature polysilicon film
A low-temperature polysilicon and thin-film technology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as the absence of very effective countermeasures, and achieve optimal surface roughness, good stability, and uniformity good effect
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[0034] The invention provides a method for preparing a photoelectric device, in particular a method for preparing a low-temperature polysilicon thin film.
[0035] The core idea of the present invention is to provide a substrate; prepare an amorphous silicon layer on the substrate; prepare a silicon oxide layer on the amorphous silicon layer by using a plasma process; perform laser polysilicon on the amorphous silicon layer chemical process.
[0036] figure 2 It is a schematic diagram of the steps of the method for preparing a low-temperature polysilicon thin film in Embodiment 1 of the present invention, as figure 2 Shown:
[0037] The preparation method of low-temperature polysilicon film among the present invention comprises the following steps:
[0038] Step 1: Prepare a buffer layer on a substrate so that the buffer layer covers the upper surface of the substrate. In this embodiment, the substrate in the preparation of the low-temperature polysilicon thin film may ...
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