Perovskite film photovoltaic cell based on SnO2 and preparation method thereof
A thin-film photovoltaic cell and perovskite technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as long-term stability, instability, and unsuitable industrial applications, and achieve good photoelectric conversion efficiency and stable performance. , reduce production costs, the effect of large-scale industrial application prospects
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Embodiment 1
[0044] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. First, cut the conductive glass to the required size with a glass knife, clean it with a detergent, and then rinse it with deionized water. Then place it in an ultrasonic cleaner to clean it with acetone, ethanol, and ionized water in sequence, and finally dry it with nitrogen to obtain a substrate with a clean surface required for the experiment.
[0045] 2) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. Configuration of perovskite solution: 1 mol / L of PbCl 2 Dissolve in dimethylformamide and stir at 60°C for 24 hours. PbCl 2 The solution was directly spin-coated on a clean conductive substrate through a glue spinner, and then annealed at 70 degrees Celsius for half an hour. PbCl 2 The sample was placed in 10 mg / L CH 3 NH 3 Soak in isopropanol solution for five minutes; finally rinse the sample with isopropanol, blow dry with nitrogen, and anneal at 70 degrees...
Embodiment 2
[0050] 1) Wash. With embodiment 1.
[0051] 2) TiO 2 Electron transport layer preparation. Take 70 mL of absolute ethanol, then add 1.9 mL of diethanolamine to it, heat at 40 °C and keep stirring for 30 minutes, then add 9 mL of butyl titanate and keep stirring at 40 °C for 40 minutes, then add 20 mL of anhydrous Ethanol, keep stirring at 40°C for 40 minutes. Stand still for 24 hours to obtain colorless, transparent and clear TiO 2 dense layer solution. The dense layer solution was evenly spin-coated on a clean FTO conductive glass substrate through a glue spinner, and finally sintered at 550 degrees Celsius for 30 minutes.
[0052] 3) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. Configuration of perovskite solution: 1 mol / L of PbCl 2 Dissolve in dimethylformamide and stir at 60°C for 24 hours. PbCl 2 The solution was uniformly and directly spin-coated on the dense TiO 2 On thin film; handle with PbCl 2 The sample was placed in 10 mg / L CH 3 NH 3 Soak ...
Embodiment 3
[0057] 1) Wash. With embodiment 1.
[0058] 2) SnO 2 Electron transport layer preparation. 0.025 mol / L of SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes, and then the precursor solution was evenly spin-coated on the cleaned ITO conductive substrate with a glue spinner; the electron transport layer was annealed at 400 degrees Celsius for 30 minutes;
[0059] 3) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. Configuration of perovskite solution: 1 mol / L of PbCl 2 Dissolve in dimethylformamide and stir at 60°C for 24 hours. PbCl 2 The solution was evenly spin-coated on the dense SnO 2 On thin film; handle with PbCl 2 The sample was placed in 10 mg / L CH 3 NH 3 Soak in isopropanol solution for five minutes; finally rinse the sample with isopropanol, blow dry with nitrogen, and anneal at 70 degrees Celsius for thirty minutes.
[0060] 4) Preparation of hole transport layer. With embodiment 1.
[0061] 5) Electrode preparation. With embodiment 1. ...
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