Preparation method of millimeter wave RF-MEMS (radio frequency-micro-electromechanical system) switch

A millimeter wave and switch technology is applied in the field of preparation of millimeter wave RF MEMS switches, which can solve the problems of low switch yield, short service life, low insertion loss and difficulty in realizing high isolation, and achieves the effect of a simple method.

Active Publication Date: 2014-11-19
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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Problems solved by technology

[0004] The existing millimeter-wave RF MEMS switch preparation method has low yield and short service life of the switch; and in the millimeter-wave frequency band, it is difficult to achieve low insertion loss and high isolation at the same time
Reducing the insertion loss of RF MEMS switches while improving isolation, yield and lifetime is a big challenge for MEMS manufacturing

Method used

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  • Preparation method of millimeter wave RF-MEMS (radio frequency-micro-electromechanical system) switch

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Embodiment Construction

[0037] Below, combine figure 1 The present invention is further described.

[0038] A preparation method of a millimeter-wave RF MEMS switch, the millimeter-wave RF MEMS switch includes a switch substrate, a CPW pattern on the switch substrate and a thin film microbridge 6, the CPW pattern includes an RF transmission line 2 and is located on both sides of the RF transmission line The ground wire 7 specifically includes the following steps:

[0039] (1) On the surface of the high-resistance silicon wafer 1, a layer of polysilicon 4 is grown by PECVD process, and then a layer of silicon dioxide 3 is grown on the polysilicon to obtain a switch substrate;

[0040] (2) cleaning and drying the silicon wafer after step (1);

[0041] (3) Send the silicon chip after step (2) into the magnetron sputtering station, and sputter the titanium-tungsten-gold film layer;

[0042] (4) take out the silicon chip after step (3) processing, cover the position other than the line pattern that nee...

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Abstract

The invention relates to the field of manufacturing an MEMS (micro-electromechanical system) device, and in particular relates to a preparation method of a millimeter wave RF-MEMS switch. The method mainly comprises the following steps: growing polycrystalline silicon and silicon dioxide on the surface of a high-resistant silicon wafer, washing the silicon wafer, manufacturing a CPW (carotid pulse wave) figure, manufacturing a silicon nitride insulating layer on an RF (radio frequency) transmission line, manufacturing a conductor layer on the silicon nitride insulating layer of the RF transmission line, manufacturing a sacrificial layer, manufacturing a film microbridge, releasing the sacrificial layer, annealing and testing performance. The millimeter wave RF-MEMS switch prepared by adopting the technical scheme provided by the invention is relatively high in rate of finished product and relatively long in the switch life, the insertion loss is low and the isolation degree is high in the millimeter wave frequency band, and the planarization method of the sacrificial layer in the manufacturing process is simple.

Description

technical field [0001] The invention relates to the field of MEMS device manufacture, in particular to a preparation method of a millimeter-wave RF MEMS switch. Background technique [0002] Electronic equipment is gradually developing in terms of functional diversification, miniaturization, light weight, and high frequency. Due to the advantages of miniaturization, intelligence, multi-function and high integration, RF MEMS devices have been more and more widely used. [0003] RF MEMS switch is one of the most basic components in MEMS radio frequency devices, and it is also the core device of radio frequency circuits. It can be used alone or combined with other microwave circuits or devices to form other composite devices, such as phase shifters, Reconfigurable antennas, filters, etc. RF MEMS switches have excellent performance in terms of insertion loss, isolation, frequency, and linearity, so they are widely used in systems such as satellite communications, navigation, a...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 党元兰赵飞梁广华刘晓兰徐亚新董自强唐小平朱二涛杨宗亮严英占王康
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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