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Preparation method of copper target

A copper target and copper billet technology, which is applied in the field of semiconductor sputtering, can solve the problems of difficulty in controlling the film formation rate, easy deformation, and the inability to increase the target area.

Inactive Publication Date: 2014-11-05
KONFOONG MATERIALS INTERNATIONAL CO LTD
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AI Technical Summary

Problems solved by technology

[0005] However, due to the limitations of the hardness of some materials such as copper (conventional copper target hardness is only 40-60HV, and the larger one is only about 80HV), the target area cannot be increased; if the area is too large (greater than 0.5 m2), it is easy to deform during the magnetron sputtering process, resulting in a decrease in the quality of the copper coating
In addition, the hardness of the target is related to the control of the film-forming rate on the substrate. Under the same ion beam current conditions, the density between copper grains based on the low-hardness copper target is low. High-density copper targets with high hardness, copper ions in low-hardness copper targets are more likely to be sputtered off the target, and it is more difficult to control the amount of copper atoms sputtered out of the target surface, which in turn affects the film formation rate. more difficult to control

Method used

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Embodiment Construction

[0028] As mentioned in the background technology, in view of the ever-increasing demand for the coating area of ​​magnetron sputtering, the area of ​​the target material used for magnetron sputtering also increases accordingly, and at the same time, the requirements for the control of the film formation rate of magnetron sputtering also increase. more stringent. Correspondingly, higher requirements are also put forward for the hardness of the target. However, the hardness of metal copper is small, and the hardness of the target obtained through the existing preparation process is not enough to meet the requirements of magnetron sputtering for large-area targets. For this reason, the present invention provides a kind of preparation method of copper target material, refer to figure 1 As shown, the preparation method of the copper target of the present invention comprises steps:

[0029] S1: provide copper blank;

[0030] S2: Densifying the copper blank by using a hot forging ...

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Abstract

The invention provides a preparation method of a copper target. The preparation method comprises the following steps: firstly, the compaction treatment is performed for a copper blank by adopting a hot forging process; a first copper target blank is formed after the copper blank is cooled; the first copper target blank is rolled to reduce the thickness by 10-50% to form a second copper target blank; and the second copper target blank is annealed to form the copper target. The preparation method can prepare the copper target with fine grains, compacter grain structure and 90-130 HV of hardness.

Description

technical field [0001] The invention relates to the field of semiconductor sputtering, in particular to a method for preparing a copper target. Background technique [0002] Magnetron sputtering is a substrate coating process that uses charged particles to bombard the target, so that the target atoms escape from the surface and are evenly deposited on the substrate. Magnetron sputtering has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, good film-substrate bonding force, excellent metal coating uniformity and strong controllability. Magnetron sputtering is widely used in coating processes in industries such as chip manufacturing, liquid crystal display manufacturing, and solar cell manufacturing. [0003] For example, in the preparation process of the interconnection on the liquid crystal display (abbreviation: LCD) liquid crystal display panel, a uniform copper coating layer is often formed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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