A kind of preparation method of aralkyl epoxy resin material for sealing semiconductor equipment
An aralkyl epoxy resin and sealing technology, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as high viscosity and poor curing, and achieve increased spiral flow length and reduced The effect of thermal expansion coefficient and good heat and humidity resistance
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Embodiment 1
[0019] A preparation method of an aralkyl epoxy resin material for semiconductor device sealing, which is carried out by the following steps:
[0020] Step 1, the mass parts are 60 parts of silica powder, 5 parts of phenolic resin, 2 parts of polyester resin, 2 parts of tetrabromobisphenol A epoxy resin, 0.5 part of carnauba wax, 5 parts of antimony trioxide , 0.5 parts of triphenylphosphine, 0.5 parts of zinc naphthenate and 3 parts of tetraglycidyl diaminodiphenylmethane were placed in a mixing mixer and mixed uniformly, wherein the mixing speed was 80 rpm for 20 minutes;
[0021] Step 2: Put the mixed material obtained in Step 1 into a kneader, knead at 90° C., with a rotation speed of 1000 rpm for 15 minutes, and discharge after kneading;
[0022] Step 3, pulverizing the material kneaded in step 2 to 1-3 mm to obtain a finished product.
[0023] The particle size of the silica powder in the above preparation method is 150 mesh.
Embodiment 2
[0025] A preparation method of an aralkyl epoxy resin material for semiconductor device sealing, which is carried out by the following steps:
[0026] Step 1, the mass parts are 63 parts of silica powder, 7 parts of phenolic resin, 3 parts of polyester resin, 4 parts of tetrabromobisphenol A epoxy resin, 0.6 part of carnauba wax, 7 parts of antimony trioxide , 0.6 parts of triphenylphosphine, 0.6 parts of zinc naphthenate and 5 parts of tetraglycidyl diaminodiphenylmethane were placed in a mixing mixer and mixed uniformly, wherein the mixing speed was 83 rpm, and the time was 25 minutes;
[0027] Step 2: Put the mixed material obtained in Step 1 into a kneader, and knead at 95°C with a rotation speed of 1100 rpm for 15 minutes, and discharge after kneading;
[0028] Step 3, pulverizing the material kneaded in step 2 to 1-3 mm to obtain a finished product.
[0029] The particle size of the silica powder in the above preparation method is 180 mesh.
Embodiment 3
[0031] A preparation method of an aralkyl epoxy resin material for semiconductor device sealing, which is carried out by the following steps:
[0032] Step 1, the mass parts are 65 parts of silica powder, 8 parts of phenolic resin, 4 parts of polyester resin, 5 parts of tetrabromobisphenol A epoxy resin, 0.7 part of carnauba wax, 8 parts of antimony trioxide , 0.7 parts of triphenylphosphine, 0.8 parts of zinc naphthenate and 6 parts of tetraglycidyl diaminodiphenylmethane were placed in a mixing mixer and mixed uniformly, wherein the mixing speed was 90 rpm for 30 minutes;
[0033] Step 2, put the mixed material obtained in Step 1 into a kneader, knead at 98°C, the rotation speed is 1260 rpm, and the time is 18 minutes, and the material is discharged after kneading;
[0034] Step 3, pulverizing the material kneaded in step 2 to 1-3 mm to obtain a finished product.
[0035] The particle size of the silica powder in the above preparation method is 180 mesh.
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