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Front-illuminated si-pin photodetector using micro-nano structured silicon as photosensitive layer and preparation method thereof

A micro-nano structure and photodetector technology, applied in the field of photoelectric detection, can solve the problems of poor thermomechanical properties, poor crystal quality, and incompatibility, and achieve the effects of high absorption rate, low cost, and high responsivity.

Inactive Publication Date: 2017-02-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, InGaAs semiconductor materials have disadvantages such as high price, poor thermomechanical properties, poor crystal quality, and not easy to be compatible with existing silicon microelectronics processes.

Method used

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  • Front-illuminated si-pin photodetector using micro-nano structured silicon as photosensitive layer and preparation method thereof
  • Front-illuminated si-pin photodetector using micro-nano structured silicon as photosensitive layer and preparation method thereof

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Embodiment 1

[0036] The structure of a kind of positively illuminated Si-PIN photodetector with micro-nano structure silicon as the photosensitive layer of the present invention is as follows: figure 1 As shown, it includes an I-type substrate 1, an N region 2, a micro-nano-structured silicon layer P region 3, a P+ region 4, an upper metal electrode 5 and a lower metal electrode 6, and the I-type substrate 1 can use a high-resistance Si single chip; The N region 2 can be doped by phosphorus diffusion or ion implantation; the P region 3 of the micro-nano structure silicon layer can be doped by boron diffusion or ion implantation, and nanoimprint etching is performed on it; the P+ region 4 can be re-diffused by boron or ion Implantation doping; the upper electrode 5 can adopt P-type ohmic contact; the lower end electrode 6 can adopt N-type ohmic contact; the new Si-PIN photodetector made in this way has a micro-nano structure silicon layer and a guard ring, so it has high responsivity and Ch...

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Abstract

The invention discloses a front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer and a preparation method thereof. The front-illumination Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer includes an I-type substrate , the N region located below the I-type substrate, the micro-nano structure layer P region located above the center of the I-type substrate, the P+ region located above both sides of the I-type substrate, the upper electrode located on the upper surface of the I-type substrate, and the The lower end electrode on the lower surface of the N region. The front-illuminated Si-PIN photodetector with micro-nanostructure silicon as the photosensitive layer of the present invention has higher responsivity than traditional Si photodetectors, and can also realize the detection of near-infrared light at the same time. The preparation process is simple and can be Compatible with conventional silicon semiconductor processes.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to the structure of a photoelectric detection device, in particular to a front-illuminated Si-PIN photodetector with micro-nano structured silicon as a photosensitive layer and a preparation method thereof. Background technique [0002] As an important part of optical fiber communication systems, infrared imaging systems, laser alarm systems and laser ranging systems, photoelectric detectors are widely used in civilian applications. At present, widely used photodetectors mainly include Si-based photodetectors and InGaAs near-infrared photodetectors. Among them, Si-PIN photodetectors have fast response speed and high sensitivity, and Si materials are easy to purify, easy to dope, rich in resources, low in cost, easy to large-scale integration and mature related technologies, so they are widely used. However, due to the large forbidden band width of Si material (1.12 eV...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/0352H01L31/105H01L31/18
CPCH01L31/028H01L31/035209H01L31/105H01L31/1804Y02P70/50
Inventor 李伟渠叶君吴程呈钟豪蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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