Al2O3 concentration gradient doped ZnO thin film of crystalline silicon solar cell passivation material and preparation method

A technology of solar cells and concentration gradients, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that passivation films cannot be put into practical use on a large scale, and cannot achieve passivation effects, etc., and achieve strong chemical passivation and field passivation Effect, excellent passivation effect, effect of improving minority carrier lifetime

Inactive Publication Date: 2014-09-10
LIAONING UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Al with a certain thickness 2 o 3 The thin film (>10nm) must be introduced into the laser groove process to make the Al back field contact with the -p-Si to make a good ohmic contact; while the thin film (2 o 3 The passivation film has been slow to be put into practical use on a large scale

Method used

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  • Al2O3 concentration gradient doped ZnO thin film of crystalline silicon solar cell passivation material and preparation method
  • Al2O3 concentration gradient doped ZnO thin film of crystalline silicon solar cell passivation material and preparation method

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Experimental program
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Effect test

Embodiment 1

[0030] There is a layer of Al with a thickness of 1 nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3The proportion decreases from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 100nm, and the resistivity is 10Ω·cm~1 ?10 -5 Ω·cm.

[0031] Specific steps are as follows:

[0032] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, and vacuum the deposition chamber. The deposition temperature is 150°C, the pressure is 0.15 torr, the gas flow rate is 40 sccm, and Al(CH 3 ) 3 The precursor was purged for 20ms, the deposition chamber was cleaned with high-purity nitrogen for 25s, and...

Embodiment 2

[0037] There is a layer of Al with a thickness of 10 nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3 The proportion decreases from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 30nm, and the resistivity is 10Ω·cm~1 ?10 -5 Ω·cm.

[0038] The specific steps are as follows:

[0039] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, evacuate the deposition chamber, and inject Al(CH 3 ) 3 Precursor, cleaning the deposition chamber with high-purity nitrogen gas and passing water vapor into the deposition chamber as an oxygen source, and then cleaning the deposition chamber with ...

Embodiment 3

[0044] A layer of Al with a thickness of 5 nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3 The proportion decreases successively from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 50nm, and the resistivity is 10Ω·cm~1 ?10 -5 Ω·cm.

[0045] The specific steps are as follows:

[0046] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, evacuate the deposition chamber, and inject Al(CH 3 ) 3 Precursor, cleaning the deposition chamber with high-purity nitrogen gas and passing water vapor into the deposition chamber as an oxygen source, and then cleaning the deposition chamber wi...

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Abstract

Disclosed are an Al2O3 concentration gradient doped ZnO thin film of a crystalline silicon solar cell passivation material and a preparation method. The preparation method includes performing Al2O3 deposition on the surface of a silicon wafer through atomic deposition to form an Al2O3 layer with the thickness of 1nm-10nm; subsequently, continuing performing n<1> times of ZnO deposition on the Al2O3 layer followed by performing one time of Al2O3 deposition to achieve one-time Al2O3 doped ZnO deposition; performing repeated deposition according to the manner of Al2O3 doped ZnO deposition, wherein the current ZnO deposition is performed for one more time than the previous ZnO deposition so as to form an Al2O3 concentration gradient doped ZnO layer with the thickness of 30nm-100nm; taking out the silicon wafer after deposition is finished and performing annealing to obtain the crystalline silicon solar cell passivation thin film. The Al2O3 concentration gradient doped ZnO thin film and the preparation method have the advantages that the thin film is reasonably designed, the preparation process is easy to operate, a good passivation effect is achieved on a crystalline silicon solar cell, and photoelectric converting efficiency of the cell is high.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, in particular to a solar cell passivation material Al 2 o 3 Concentration gradient doped ZnO thin film and its preparation method. Background technique [0002] Crystalline silicon solar cells have become the most widely used solar cells due to their mature technology and high photoelectric conversion efficiency. However, in the preparation process of crystalline silicon cells, processes such as cutting silicon wafers and preparing light-trapping structures will cause damage to the surface of silicon wafers. -The recombination rate of hole pairs, thereby reducing the collection of charges by electrodes and reducing the efficiency of crystalline silicon solar cells. Al 2 o 3 Thin film has dual passivation effects of chemical passivation and field passivation, and is currently the most excellent passivation material for crystalline silicon solar cells. It has been applied to PER...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1868Y02E10/50Y02P70/50
Inventor 唐立丹王冰冯嘉恒王建中
Owner LIAONING UNIVERSITY OF TECHNOLOGY
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