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A method for preparing graphene devices on a flexible substrate

A flexible substrate, graphene technology, applied in the field of microelectronics

Active Publication Date: 2017-08-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, research on the preparation of graphene transistors on flexible substrates is still in its infancy

Method used

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  • A method for preparing graphene devices on a flexible substrate
  • A method for preparing graphene devices on a flexible substrate
  • A method for preparing graphene devices on a flexible substrate

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specific Embodiment approach

[0068] A double-layer e-beam photoresist is then coated on the substrate. The specific implementation is as follows: the upper surface of the flexible substrate 1 is spin-coated with PMMA1 type electron beam photoresist 2 (such as 495A5) by an automatic glue leveler, and the automatic glue leveler rotating speed is set to 500rpm at a slow speed first, and the time is 10s or so, and then fast 4000rpm, the time is about 45s, and then it can be dried at a temperature of about 180°C. Then spin-coat PMMA2 type electron beam photoresist 3 (such as 950A2), the speed is set to slow at 500rpm, the time is about 10s, and then fast at 4000rpm, the time is about 45s, and then the temperature is about 180 ℃ for drying . The obtained structure diagram is as follows figure 2 shown.

[0069] The electron beam photoresists PMMA1 and PMMA2 used are small molecular weight photoresists and large molecular weight photoresists respectively. After electron beam exposure photoresists, the long ca...

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Abstract

The invention discloses a method for preparing a graphene device on a flexible substrate. The method for preparing the graphene device on the flexible substrate at least includes: 1) providing the flexible substrate, attaching the flexible substrate to a hard substrate, and forming graphene conducting channels in the flexible substrate; 2) carrying out electron beam lithography patterning to form a source electrode pattern and a drain electrode pattern, and depositing metal and peeling to form a metal source electrode at one end of each graphene conducting channel and form a metal drain electrode at the other end; 3) using a low-temperature deposition process to deposit at the surface of the structure obtained through the step 2) to form a gate medium layer; 4) etching the gate medium layer to expose the metal source electrode and metal drain electrode at two ends of the graphene conducting channel; 5) carrying out electron beam lithography patterning to form a gate electrode pattern, and depositing metal and peeling to form a gate electrode on the gate medium layer between graphene conducting channels; 6) forming a contact electrode; 7) separating the flexible substrate from the hard substrate.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for preparing graphene devices on a flexible substrate. Background technique [0002] With the development of semiconductor process technology, the fabrication process of graphene microelectronic devices based on silicon substrates has become increasingly mature and compatible with standard CMOS fabrication processes. Graphene transistors have high switching ratio, low noise and excellent stability, and will become the best substitute for silicon-based semiconductor devices. People's ever-increasing requirements for electronic products, such as lighter, thinner, impact-resistant, high-performance, and portability, have opened up research and difficulties in the field of flexible electronic device integration. The preparation of electronic devices on flexible substrates has the advantages of light weight, foldable, easy to transport and not easy to break, and it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28H01L21/285
CPCH01L21/0228H01L29/41725H01L29/42364H01L29/66045
Inventor 王浩敏谢红王慧山孙秋娟陈吉张学富吴天如谢晓明江绵恒
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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