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Method for measuring activation energy of resistive random access memory

A technology of resistive memory and activation energy, applied in static memory, instruments, etc., can solve the problems of activation energy error, inability to distinguish activation energy, inability to analyze carrier transport characteristics in resistive memory, etc., to reduce The effect of measurement error

Active Publication Date: 2014-07-16
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the activation energy measured by this experimental method is the activation energy of the device as a whole, and cannot distinguish the respective activation energies of electron movement, ion diffusion and other carrier movements, so it is not possible to accurately analyze the activation energy in the resistive variable memory through the activation energy. Carrier transport properties
[0005] In addition, due to the unavoidable error in the measurement, the activation energy obtained by the variable temperature test will also have errors, which has a significant impact on the study of the microscopic physical mechanism of the resistive memory.

Method used

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  • Method for measuring activation energy of resistive random access memory
  • Method for measuring activation energy of resistive random access memory
  • Method for measuring activation energy of resistive random access memory

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Embodiment 1

[0065] With W / Ti / HfO 2 / Pt device as an example, first obtain the I-V characteristics under the state of HRS and LRS by electrical method measurement, then pass the read voltage of 0.1V, obtain the current value under the low resistance state when the read voltage is 1.97×10 -4 A, the current value in the high resistance state is 1.14×10 -5 A, will be 1.97×10 -4 Calculation is performed in formula (1) of A generation, and the activation energy of the carrier transition in the low-resistance state is obtained; the 1.14×10 -5 A is substituted into formulas (3) and (4), and then combined with formulas (2)-(5) to calculate the activation energy of the carrier transition in the high-impedance state. The result is as figure 2 As shown, in the low-resistance state (LRS), the activation energy of carrier transition is Ea=0.9344eV, and in the high-resistance state (HRS), the activation energy of carrier transition is Ea=0.9889eV. The parameters used in the calculation are: the tem...

Embodiment 2

[0067] With TiN / ZrO 2 / Pt device as an embodiment, then through the reading voltage of 0.1V, the current value in the low resistance state when obtaining the reading voltage is 1.09×10 -4 A, the current value in the high resistance state is 1.17×10 -5 A; will be 1.09×10 -4 Calculation is carried out in the formula (1) of A generation, and the activation energy of the carrier transition in the low-resistance state is obtained; the 1.17×10 -5 A is substituted into formulas (3) and (4), and then combined with formulas (2)-(5) to calculate the activation energy of the carrier transition in the high-impedance state. The result is as image 3 As shown, in the low resistance state (LRS), the activation energy of the carrier transition is Ea=1.9431eV, and in the high resistance state (HRS), the activation energy of the carrier transition is Ea=1.9906eV. The parameters used in the calculation are: the temperature is T=300K, V=0.1V, σ 0 =10 13 S / m, α -1 = 1.5nm, R ij = 0.385nm, ...

Embodiment 3

[0069] Cu / WO 3 / Pt device as an embodiment, then through the reading voltage of 0.1V, the current value in the low resistance state when obtaining the reading voltage is 2.0×10 -7 A, the current value in the high resistance state is 2.04×10 -8 A; put 2.0×10 -7 Calculation is performed in formula (1) of A generation to obtain the activation energy of the carrier transition in the low-resistance state; the 2.04×10 -8 A is substituted into formulas (3) and (4), and then combined with formulas (2)-(5) to calculate the activation energy of the carrier transition in the high-impedance state. The result is as Figure 4 As shown, in the low resistance state (LRS), the activation energy of carrier transition is Ea=0.7352eV, and in the high resistance state (HRS), the activation energy of carrier transition is Ea=0.7953eV. The parameters used in the calculation are: the temperature is T=300K, V=0.1V, σ 0 =10 13 S / m, α -1 = 1.5nm, R ij = 0.385nm, ε = 35, μ 0 =150m 2 / Vs, L=50nm...

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Abstract

The invention discloses a method for measuring the activation energy of a resistive random access memory. The method comprises the following steps of measuring an I-V curve of the resistive random access memory, and determining a low resistance state current value and a high resistance state current value of the resistive random access memory according to the I-V curve; calculating the current in a conductive filament of the resistive random access memory in a low resistance state and a high resistance state; calculating an external electric field of the conductive filament of the resistive random access memory in the high resistance state; calculating the activation energy of carrier transition in the low resistance state and the high resistance state. After the method is adopted, the activation energy of the resistive random access memory can be measured by a simple method, so that the measurement error is greatly reduced, the activation energy during carrier movement such as electron motion, and ion diffusion can be distinguished, and the theoretical direction is provided for the research of microscopic physical mechanism of the resistive random access memory.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory devices, in particular to a method for measuring the activation energy of a resistive variable memory. Background technique [0002] Memory is one of the most basic and important components in integrated circuits, and it is also an important indicator of the technical level of microelectronics. With the rapid development of modern information technology, people are constantly pursuing non-volatile memory chips with faster speed, higher capacity and lower power consumption to store massive data while possessing exponentially increasing information processing capabilities. So far, flash memory (Flash) is the most successful high-density non-volatile memory. However, as the size of the device continues to shrink, the development of Flash is limited. On the one hand, its programming voltage cannot be reduced proportionally. On the other hand, as the size of the device decreases and the t...

Claims

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Application Information

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IPC IPC(8): G11C29/08
Inventor 卢年端李泠刘明孙鹏霄王明刘琦
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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