Laser pulse annealing equipment and annealing method

Abstract

The invention discloses laser pulse annealing equipment and an annealing method applied to the laser pulse annealing equipment. A disk in which multiple wafers can be simultaneously placed is arranged in a reaction cavity of the laser pulse annealing equipment and is made to rotate and linearly move in the annealing treatment process, so that the wafers in wafer placement grooves in the disk sequentially and circularly pass through laser radiation points to be uniformly radiated by laser under driving of continuous rotation and linear reciprocating motion of the disk, and bulk annealing treatment on the wafers is achieved. According to the laser pulse annealing equipment and the annealing method, compared with traditional laser pulse annealing equipment which can only carry out annealing treatment on a single wafer, the laser pulse annealing equipment has the same annealing effect, annealing efficiency is remarkably improved, and the equipment and the method can well meet the process demands for annealing quality and efficiency in the high-end advanced process.

Description

technical field [0001] The invention relates to a laser pulse annealing device for semiconductor processing, more specifically, to a laser pulse annealing device capable of performing batch annealing on semiconductor wafers and an annealing method using the device. Background technique [0002] In the manufacture of semiconductor integrated circuits, according to different processes, such as including (but not limited to) chemical vapor deposition, oxidation or nitriding, ion implantation annealing, and doping activation, it is often necessary to perform multi-step annealing on the wafer Heat treatment repairs crystal damage and eliminates dislocations. Currently, these heat treatments can be carried out, for example, in conventional vertical furnace installations. Although the process time required for these heat treatments may be relatively short, the heating and cooling rates of conventional equipment such as vertical furnaces are relatively slow. The longer times durin...

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Problems solved by technology

[0008] The purpose of the present invention is to overcome the above-mentioned defects in the prior art of low efficiency caused by single-wafer annealing and difficulty in meeting the increasingly stringent demand for thermal budgets, and to provide a laser that can perform batch annealing of semiconductor wafers Pulse annealing equipment, by changing the wafer fixing device in the reaction chamber of the laser pulse annealing equipment from the form that can only place a single wafer, to a disc form, with several wafer placement grooves around the circumference of the disc , and the disk can rotate and move linearly; and at the same time provide an annealing method using the new laser pulse annealing equipment, so that the wafers in the grooves of each wafer are driven by the continuous rotation and linear reciprocating movement of the disk Under this condition, the laser irradiation point can be circulated sequentially to receive the uniform irradiation of the laser to realize batch annealing of the wafers

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