Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of high thermal conductivity artificial graphite film

A technology of high thermal conductivity graphite and graphite film, applied in the field of heat dissipation, can solve the problem of not being ideal, and achieve the effects of high crystallinity, small coefficient of linear expansion, and large birefringence

Active Publication Date: 2014-06-25
中科悦达(上海)材料科技有限公司
View PDF8 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be pointed out that the artificial graphite film material produced by this method is not very ideal in terms of thermal conductivity, electrical conductivity and strength.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] At a temperature of 40° C., add 20 g of acid dianhydride and 40 g of diamine compound into a reaction kettle filled with an organic polar solvent, stir for 5 minutes, mix well, and obtain a polyamic acid solution after polymerization. Place the prepared polyamic acid solution, 2g of imidization accelerator, 1g of dehydrating agent, 4g of end-capping agent, 5g of microwave heating material and 2g of nano black liquor material in a stirring tank, stir for 10min, and after stirring evenly, place Cast on a support to form a film, and finally heat and dry in an oven at a temperature of 80° C. to obtain a polyimide film. Select polyimide film as the raw material, stack it crosswise, place it in a carbonization furnace and heat it up to the carbonization temperature within a certain period of time for carbonization, then move the carbonized material to the graphitization furnace for graphitization, take it out and calender, An artificial heat-conducting graphite film was prepa...

Embodiment 2

[0025] At a temperature of 60° C., add 30 g of acid dianhydride and 50 g of diamine compound into a reaction kettle filled with an organic polar solvent, stir for 10 minutes, mix well, and obtain a polyamic acid solution after polymerization. Place the prepared polyamic acid solution, 3g of imidization accelerator, 2g of dehydrating agent, 6g of end-capping agent, 12g of microwave heating material and 5g of nanometer black liquor material in a stirring tank, and stir for 17min. After stirring evenly, place Casting is performed on a support to form a film, and finally heated and dried in an oven at a temperature of 100° C. to obtain a polyimide film. Select polyimide film as the raw material, stack it crosswise, place it in a carbonization furnace and heat it up to the carbonization temperature within a certain period of time for carbonization, then move the carbonized material to the graphitization furnace for graphitization, take it out and calender, An artificial heat-conduc...

Embodiment 3

[0027] At a temperature of 80°C, add 35g of acid dianhydride and 75g of diamine compound into a reaction kettle filled with an organic polar solvent, stir for 30min, mix well, and obtain a polyamic acid solution after polymerization. Place the prepared polyamic acid solution, 5g of imidization accelerator, 5g of dehydrating agent, 10g of end-capping agent, 15g of microwave heating material and 7g of nano black liquor material in a stirring tank, and stir for 40min. After stirring evenly, place Casting is performed on a support to form a film, and finally heated and dried in an oven at a temperature of 100° C. to obtain a polyimide film. Select polyimide film as the raw material, stack it crosswise, place it in a carbonization furnace and heat it up to the carbonization temperature within a certain period of time for carbonization, then move the carbonized material to the graphitization furnace for graphitization, take it out and calender, An artificial heat-conducting graphite...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thermal conductivityaaaaaaaaaa
Thermal conductivityaaaaaaaaaa
Thermal conductivityaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of new nanometer materials, in particular to a manufacturing method of a high thermal conductivity artificial graphite film. The method comprises the steps that additive acid dianhydride, diamine compounds and organic polar solvent are polymerized in a reaction still to form a polyamide acid solution at certain temperature; the polyamide acid solution, imidize accelerant, a dehydrating agent, an end-capping reagent, a microwave heating material and a nanometer black liquor material are stirred in a stirred tank, are placed on a support to be in a film shape in a tape-casting mode and then are heated and dried in an oven, and polyimide films are obtained; the obtained polyimide films serve as raw materials, and are crossed, stacked, carbonized and graphitized, and finally the high thermal conductivity artificial graphite film is obtained. The manufacturing method is advanced in process, and the obtained graphite film has high thermal conductivity performance and good bending resistance.

Description

technical field [0001] The invention relates to the technical field of heat dissipation, and relates to a method for preparing an artificial graphite film with high thermal conductivity. technical background [0002] With the rapid development of microelectronics integration technology and high-density printed board assembly technology, the assembly density has increased rapidly, the volume of electronic components and logic circuits has been reduced by thousands of times, and electronic instruments and equipment are becoming lighter, thinner, shorter and smaller. direction of development. Under high-frequency operating frequency, the working thermal environment of semiconductors moves rapidly towards high temperature. At this time, the heat generated by electronic components accumulates and increases rapidly. Under the ambient temperature of use, electronic components must still work normally with high reliability , and the ability to dissipate heat in time becomes a key l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H05K7/20
Inventor 王庆蔡铜祥刘岸春
Owner 中科悦达(上海)材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products