Junction terminal applied to deep-groove super-junction device and manufacturing method thereof

Abstract

The invention discloses a junction terminal applied to a deep-groove super-junction device and a manufacturing method thereof. The junction terminal comprises a semiconductor substrate, a first electrode, a semiconductor region, and a second electrode, wherein the first electrode is formed on the lower end surface of the semiconductor substrate; the semiconductor region is formed on the upper end surface of the semiconductor substrate and is provided with a first conductive type; the semiconductor region comprises an active region, a first terminal region, and a second terminal region. The active region is provided with a plurality of first grooves, and the first grooves are internally filled with semiconductor material with a second conductive type; the first terminal region is provided with a plurality of third grooves, and the third grooves are internally filled with semiconductor material with a second conductive type; the second terminal region is provided with a plurality of second grooves, and the second grooves are internally provided with insulated material with high dielectric constants. The second electrode is connected with the first grooves of the active region and covers the active region, the first terminal region and the second terminal region. The junction terminal of the invention can improve high voltage-resisting characteristics of the junction terminal device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, relates to a junction terminal of a super junction device, in particular to a junction terminal suitable for a deep trench super junction device; at the same time, the invention also relates to a junction terminal suitable for a deep trench super junction device Preparation method of junction terminal. Background technique [0002] Modern power electronics technology has roughly the following requirements for the performance of power devices: 1) high withstand voltage, 2) high current density when turned on; 3) low voltage on the device when turned on, 4) high switching speed, 5) drive The power is small, the above points 3 and 4 are especially noteworthy. VDMOS, which appeared in 1980, has been used until now due to its high withstand voltage, fast switching speed, and low driving power. However, the traditional VDMOS on-resistance is limited by the "silicon limit" relation...

AI Technical Summary

Problems solved by technology

The structure of P-pillars and N-pillars alternating with each other is adopted alone, the process technology difficulty is low, and the yield rate is high, but this junction terminal is a waste of area

The structure of filling the trench with high dielectric constant material alone can greatly reduce the area of ​​the junction terminal, but the width of the trench increases with the increase of the withstand voltage requirement of the device. With the increase of the trench width, the engraved The etching and filling time are also greatly increased, which reduces the production efficiency; at the same time, because the trench structure bears most of the withstand voltage of the device, the requirements for the filling quality of the trench are extremely high, that is, the control of filling voids, impurities and other defects is extremely demanding. Harsh, the difficulty of process technology has increased to a large extent

[0005] At present, the terminals of most super junction devices on the market adopt a structure in which P columns and N columns alternate with each other. As mentioned above, the disadvantage of this junction terminal structure is that a large area is wasted in the terminal area, thereby increasing manufacturing costs.

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