Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for cleaning gallium lanthanum silicate wafer

A technology of lanthanum gallium silicate and wafers, which is applied in the directions of cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., to achieve the effects of prolonging time, improving cleanliness, and improving cleaning effects

Active Publication Date: 2015-12-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a method for cleaning lanthanum gallium silicate wafers, to solve the cleaning problem of lanthanum gallium silicate wafers after cutting, and to improve the cleanliness of lanthanum gallium silicate wafer surfaces

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for cleaning gallium lanthanum silicate wafer
  • A method for cleaning gallium lanthanum silicate wafer
  • A method for cleaning gallium lanthanum silicate wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] figure 1 It is a schematic diagram of the corrosion of gallium lanthanum silicate wafers by different acid solutions, showing that various acid solutions have certain corrosion effects on gallium lanthanum silicate wafers, but phosphoric acid is much less corrosive to gallium lanthanum silicate crystals than Hydrochloric acid is commonly used in traditional cleaning solutions.

[0031] figure 2 It is a typical cleaning process flow chart commonly used in the traditional silicon integrated circuit industry. figure 2 It can be seen that in the traditional cleaning process, hydrochloric acid is often used as the main component of the acid cleaning solution, and the cleaning time of the acid cleaning solution is lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for washing a silicic acid gallium lanthanum wafer. The method includes the following steps that cleaning fluid composed of phosphoric acid, hydrogen peroxide and deionized water is used for carrying out mega sound washing on the silicic acid gallium lanthanum wafer; the washed silicic acid gallium lanthanum wafer is rinsed and spun to be dry; cleaning fluid composed of ammonium hydroxide, hydrogen peroxide and deionized water is used for carrying out mega sound washing on the silicic acid gallium lanthanum wafer; the washed silicic acid gallium lanthanum wafer is rinsed and spun to be dry; the wafer spun to be dry is placed into an oven to be dried. According to the method for washing the silicic acid gallium lanthanum wafer, time of an acid cleaning procedure is shortened and time of an alkaline washing procedure is prolonged; meanwhile, more effective mega sound cleaning is used for replacing traditional ultrasonic cleaning, the problem of washing the cut silicic acid gallium lanthanum wafer is solved, the cleanliness of the surface of the silicic acid gallium lanthanum wafer is improved and a good cleaning effect is obtained.

Description

technical field [0001] The invention relates to a method for cleaning the gallium lanthanum silicate wafer, which solves the cleaning problem of the gallium lanthanum silicate wafer after cutting and improves the cleanliness of the gallium lanthanum silicate wafer surface. Background technique [0002] At present, SAW devices generally use piezoelectric materials such as lithium niobate, lithium tantalate, or quartz as substrates, but these materials also have their own shortcomings: the thermal stability of lithium niobate and lithium tantalate is poor; The small electromechanical coupling coefficient makes SAW devices based on quartz substrates have disadvantages such as small bandwidth and large insertion loss, and quartz will undergo α-β phase transition at around 573°C and lose piezoelectric properties, making it unsuitable for high-temperature sensors . Since the mid-1990s, lanthanum gallium silicate (langasite, La 3 Ga 5 SiO 14 , LGS) crystals have rapidly become ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/12C30B33/00C30B29/34
CPCB08B3/12C30B29/34C30B33/00
Inventor 李冬梅周磊梁圣法李小静张浩谢常青刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com