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Preparation method of non-photosensitive polyimide passivation layer

A polyimide, non-photosensitive technology, applied in the production field of non-photosensitive polyimide passivation layer, can solve the problem of long soft baking time and development time, reduce equipment production efficiency, and increase the metal corrosion of developer solution. Risks and other issues, to eliminate the dependence of soft baking temperature and time, reduce high temperature baking time, and eliminate the effect of causing problems

Active Publication Date: 2016-11-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] In addition, the longer soft-baking time and developing time, on the one hand, reduce the production efficiency of related equipment, and also increase the risk of metal corrosion by the developer

Method used

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  • Preparation method of non-photosensitive polyimide passivation layer
  • Preparation method of non-photosensitive polyimide passivation layer
  • Preparation method of non-photosensitive polyimide passivation layer

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Embodiment Construction

[0045] Such as image 3 Shown is the flow chart of the preparation method of the non-photosensitive polyimide passivation layer of the embodiment of the present invention; the preparation method of the non-photosensitive polyimide passivation layer of the embodiment of the present invention comprises the following steps:

[0046] Step 1, providing a substrate on which a non-photosensitive polyimide passivation layer needs to be fabricated on the surface.

[0047]A semiconductor device is formed in the substrate and the top metal wiring of the semiconductor device has been fabricated, and the non-photosensitive polyimide passivation layer is used to be formed on the top metal wiring and serve as the A passivation layer of a semiconductor device; or, a semiconductor device is formed in the substrate and the top metal wiring of the semiconductor device has been made, and a dielectric layer passivation layer is formed on the top metal wiring, so The non-photosensitive polyimide p...

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Abstract

The invention discloses a method for making a non-photosensitive polyimide passivation layer, which includes the steps of: providing a substrate; performing oxygen plasma treatment on the surface of the substrate; or growing a layer of dioxide on the surface of the substrate Silicon layer or silicon oxynitride layer; spin-coat a layer of non-photosensitive polyimide on the surface of the substrate; perform two-stage soft baking of the non-photosensitive polyimide; apply photoresist and soft bake; perform Expose; develop; remove photoresist with photoresist stripping process; cure non-photosensitive polyimide. The invention can eliminate the lifting problem of non-photosensitive polyimide, improve production efficiency, and reduce the risk of metal corrosion caused by the developer during the development process.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a method for manufacturing a non-photosensitive polyimide passivation layer. Background technique [0002] Because of its excellent heat resistance, chemical corrosion resistance, electrical insulation and mechanical and mechanical properties, polyimide is widely used in chip protection passivation film in microelectronic devices to reduce various natural environments and working conditions. The impact of the environment on semiconductor devices improves the yield of chips and enhances the reliability and stability of devices. With the improvement of the withstand voltage performance of high-voltage devices, the thickness of non-photosensitive polyimide is also required to be higher and higher. . [0003] Such as figure 1 As shown, it is a schematic diagram of the non-photosensitive polyimide after development in the conventional manufacturing m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/312G03F7/20G03F7/00
CPCH01L21/31058H01L21/02118
Inventor 程晋广郭晓波童宇锋
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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