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Production process of large-diameter ultrathin quartz wafer

A technology of quartz wafers and production processes, which is applied in stone processing equipment, fine working devices, manufacturing tools, etc., can solve the problems of difficult batch processing of quartz wafers, high technical difficulty for processors, high equipment occupancy rate, etc., and achieve easy solution Effects of scratching, improving utilization rate, and improving production efficiency

Inactive Publication Date: 2014-06-11
DEQING JINGHUI OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of laser technology, especially the rapid development of MEMS technology, not only requires a very thin thickness of optical components, but also has stricter requirements on the TTV BOW thickness tolerance and thickness of the wafer, and the thinner the optical component, the material defects and the use environment The smaller the impact on the performance of optical components, but the higher the technical difficulty for processors
[0003] The existing processing technology can only use a double-sided polishing machine to polish wafers with a diameter of 150-300 mm and a thickness of more than 0.5 mm, and the larger the diameter, the thicker the processing thickness of the wafer, and it is difficult to process quartz wafers with a thickness of 0.1 mm in batches
In actual production, quartz wafers with a diameter of 150m and a thickness of 0.1mm have not formed mass production conditions, and the equipment occupancy rate is high and the production efficiency is low.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A: Quartz crystal lumps are cut into wafers with a thickness of 0.6mm by a wire cutter, poured into a C-shaped edge with an automatic chamfering machine, and put into an etching solution for 12 hours to reduce internal stress.

[0020] B: Grind with 16B double-sided grinder and No. 3000 green carbon silica sand, the equipment speed is 10 rpm, the reverse pressure is 80MPa, grind to a thickness of 0.53mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves.

[0021] C: Polish the double-sided polished wafer with a 16B double-sided polishing machine, the equipment speed is 30-40 rpm, the reverse pressure is 110MPa, the polishing powder has a particle size of 1um, and the polishing time is 90 minutes. The polished wafer The size is 0.50mm, take out the wafer and clean it with ultrasonic waves, dry it with a spin dryer, and apply a protective paint on one side of the wafer with a glue spreader.

[0022] D: Put the cleaned op...

Embodiment 2

[0028] A: Quartz crystal lumps are cut into wafers with a thickness of 0.8mm by a wire cutter, poured into a C-shaped edge with an automatic chamfering machine, and put into an etching solution for 13 hours of corrosion to reduce internal stress.

[0029] B: Grind with 16B double-sided grinder and No. 3000 green carbon silica sand, the equipment speed is 10 rpm, the reverse pressure is 80MPa, grind to a thickness of 0.55mm according to the reading of the grating ruler, take out the wafer, and clean it with ultrasonic waves.

[0030] C: Polish the double-sided polished wafer with a 16B double-sided polishing machine, the equipment speed is 30-40 rpm, the reverse pressure is 110MPa, the polishing powder has a particle size of 1um, and the polishing time is 90 minutes. The polished wafer The size is 0.45mm. Take out the wafer and clean it with ultrasonic waves, dry it with a spin dryer, and apply a protective paint on one side of the wafer with a glue spreader.

[0031] D: Put t...

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Abstract

The invention belongs to the technical field of a quartz wafer tool, and particularly relates to a production process of a large-diameter ultrathin quartz wafer. The invention discloses a production process of a large-diameter ultrathin quartz wafer. The production process comprises the following steps of A, cutting quartz crystal lump by utilizing a fret saw; B, grinding the quartz crystal lump by adding green carbon silicon sand by utilizing a double-sided grinding machine; C, coating one surface of a wafer with protective paint by utilizing a spin coater; D, adhering the wafer onto an optical cement plate; E, grinding the optical cement plate with wafers being adhered on the upper surface and the lower surface; F, polishing the wafer with two sides being well ground by utilizing a double-sided polishing machine; G, placing the wafer into a wafer box after the wafer is qualified in inspection. By adopting the production process, the precision of a product of the processed quartz wafer is guaranteed, the mass production of the large-diameter ultrathin wafer is realized, the production efficiency is improved, and the production of the large-diameter quartz wafer is realized.

Description

technical field [0001] The invention belongs to the technical field of quartz wafer appliances, in particular to a production process of a large-diameter ultra-thin quartz wafer. Background technique [0002] With the development of laser technology, especially the rapid development of MEMS technology, not only requires a very thin thickness of optical components, but also has stricter requirements on the TTV BOW thickness tolerance and thickness of the wafer, and the thinner the optical component, the material defects and the use environment The smaller the impact on the performance of optical components, but the higher the technical difficulty for processors. [0003] The existing processing technology can only use a double-sided polishing machine to polish wafers with a diameter of 150-300 mm and a thickness of more than 0.5 mm, and the larger the diameter, the thicker the processing thickness of the wafer, and it is difficult to process quartz wafers with a thickness of ...

Claims

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Application Information

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IPC IPC(8): B28D5/00B24B37/08
Inventor 李春忠
Owner DEQING JINGHUI OPTOELECTRONICS TECH
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