Crystal silicon cell double-layer passivation anti-reflection structure

Abstract

The invention relates to the field of crystal silicon solar energy battery passivation anti-reflection technology, and particularly relates to a crystal silicon cell double-layer passivation anti-reflection structure. The crystal silicon cell double-layer passivation anti-reflection structure is characterized in that two layers of silicon nitride films are plated on the surface of a crystal silicon cell sheet, i.e., a lower layer silicon nitride film above the crystal silicon cell and an upper layer silicon nitride film above the lower layer silicon nitride film; the lower layer silicon nitride film has a thickness of d2 and a refractive index of n2; the upper layer silicon nitride film has a thickness of d1 and a refractive index of n1; and d1>d2, and n2<n2. Since the refractive index of the lower layer silicon nitride film is quite large and the extinction coefficient of itself is also large, a part of short waves are absorbed, at the same time, since the optical coupling of the double-layer silicon nitride films in terms of structure is superior to the optical coupling of a single-layer silicon nitride film, the reflection of a shortwave range is reduced, along a light incidence direction, the refractive index of the silicon nitride films is increased, the density of a Si-H key in the films shows an upward trend, and the larger the refractive index is, the better the passivation effect is, such that the combination of dual effects of double-layer film anti-reflection and passivation is realized.

Description

technical field [0001] The invention relates to the technical field of passivation and antireflection of crystalline silicon solar cells, in particular to a double-layer passivation and antireflection structure of crystalline silicon solar cells. Background technique [0002] At present, the crystalline silicon solar cells on the market generally adopt the method of coating anti-reflection film on the crystalline silicon cell to reduce the reflection of the battery on the incident light, passivate the surface of the battery to improve the efficiency and life of the battery, etc., but the single-layer film The anti-reflection effect and passivation effect are not very ideal, and the loss of incident light is still very large. Contents of the invention [0003] Aiming at the above problems, the present invention provides a double-layer passivation anti-reflection structure of a crystalline silicon cell with excellent ultra-broadband anti-reflection effect and enhanced passiv...

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Problems solved by technology

[0002] At present, the crystalline silicon solar cells on the market generally adopt the method of coating anti-reflection film on the crystalline silicon cell to reduce the reflection of the cell on the incident light, passivate the surface of the cell to improve the efficiency and life of the cell, etc., but the single-layer film The anti-reflection effect and passivation effect are not very ideal, and the loss of incident light is still very large

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