Plasma treatment method

Abstract

The invention discloses a plasma treatment method. The plasma treatment method comprises the following steps: introducing a first reaction gas into a process chamber; and carrying out plasma treatment of a substrate etched by the first reaction gas in order to remove the sector morphology. In the technical scheme of the plasma treatment method provided by the invention, the substrate etched by the first reaction gas is subjected to the plasma treatment in order to eliminate or reduce the sector morphology, so the roughness of the sidewall of the substrate is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a plasma treatment method. Background technique [0002] With Micro-Electro-Mechanical Systems (hereinafter referred to as: MEMS) being more and more widely used in automotive and consumer electronics fields and TSV through-hole etching (ThroughSilicon Etch) technology has more and more prospects in the future packaging field The more extensive, the dry plasma silicon deep etching process has gradually become one of the hottest processes in the field of MEMS processing and TSV technology. The main difference between the silicon deep etching process and the general silicon etching process is that the etching depth of the silicon deep etching process is much larger than that of the general etching process, and the etching depth of the silicon deep etching process is generally tens of microns or even up to Hundreds of microns, while the etching depth of the general silicon...

AI Technical Summary

Problems solved by technology

The formed fan-shaped morphology will cause uneven line width of the groove or hole, which in turn will have a negative impact on the subsequent process

[0004] To sum up, in the prior art, after the deep silicon etching process, fan-shaped topography is formed on the side wall of the substrate, thereby increasing the roughness of the side wall of the substrate.

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