A Method for Reducing the Roughness of the Sidewall of Silicon-Based Optical Waveguide

A technology for silicon-based optical waveguides and rough sidewalls, which is applied in the directions of optical waveguides, light guides, optics, etc., can solve the problems of large roughness of the sidewalls of silicon-based optical waveguides, and reduce the roughness of the sidewalls and reduce the roughness. , the effect of maintaining shape and size

Active Publication Date: 2020-03-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present application solves the problem of excessive roughness of the sidewall of the silicon-based optical waveguide in the prior art by providing a method for reducing the roughness of the sidewall of the silicon-based optical waveguide

Method used

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  • A Method for Reducing the Roughness of the Sidewall of Silicon-Based Optical Waveguide
  • A Method for Reducing the Roughness of the Sidewall of Silicon-Based Optical Waveguide
  • A Method for Reducing the Roughness of the Sidewall of Silicon-Based Optical Waveguide

Examples

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Effect test

Embodiment 1

[0050] providing a substrate; forming a silicon-based optical waveguide bar on the substrate; performing hydrogen annealing on the substrate containing the silicon-based optical waveguide bar, the chamber pressure of the hydrogen annealing is 20 Torr, and the annealing temperature is 950°C, Among them, the heating rate is 2-5°C / s, the annealing time is 10s, the annealing chamber is loaded with hydrogen as a protective gas, and the hydrogen flow rate is 180L / min.

[0051] Under high-temperature annealing conditions, hydrogen interacts with the dangling bonds on the adjacent dimers on the surface of the silicon-based optical waveguide to promote the formation of silicon-hydrogen bonds. Due to the existence of silicon-hydrogen bonds, the flow density vector of silicon-hydrogen bonds tends to migrate from a high-energy state to a low-energy state, which increases the activity of silicon atoms on the surface of the waveguide and increases the atomic mobility, thereby better smoothin...

Embodiment 2

[0053] The difference between Example 2 and Example 1 is that the chamber pressure of the hydrogen annealing is increased from 20 Torr in Example 1 to a standard atmospheric pressure.

[0054] Example 2:

[0055] providing a substrate; forming a silicon-based optical waveguide bar on the substrate; performing hydrogen annealing on the substrate containing the silicon-based optical waveguide bar, the chamber pressure of the hydrogen annealing is 1 atm, and the annealing temperature is 950°C, Among them, the heating rate is 2-5°C / s, the annealing time is 10s, the annealing chamber is loaded with hydrogen as a protective gas, and the hydrogen flow rate is 180L / min.

[0056] Under high-temperature annealing conditions, hydrogen interacts with the dangling bonds on the adjacent dimers on the surface of the silicon-based optical waveguide to promote the formation of silicon-hydrogen bonds. Due to the existence of silicon-hydrogen bonds, the flow density vector of silicon-hydrogen b...

Embodiment 3

[0059] The difference between Example 3 and Example 1 is that the temperature of the hydrogen annealing is adjusted from 950°C in Example 1 to 600°C, the annealing time is adjusted from 10s in Example 1 to 30s, and an etching gas is introduced.

[0060] Example 3:

[0061]providing a substrate; forming a silicon-based optical waveguide bar on the substrate; performing hydrogen annealing on the substrate containing the silicon-based optical waveguide bar, the chamber pressure of the hydrogen annealing is 20 Torr, and the annealing temperature is 600°C, Among them, the heating rate is 2-5°C / s, the annealing time is 30s, the annealing chamber is loaded with hydrogen as a protective gas, the hydrogen flow rate is 180L / min, and the etching gas hydrogen chloride is fed, and the flow rate of hydrogen chloride is 10sccm.

[0062] The etching gas selected in the present invention is preferably hydrogen chloride, but not limited to hydrogen chloride. The flow rate of the hydrogen chlor...

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Abstract

The invention belongs to the semiconductor integration technology field and discloses a method for reducing silicon-based optical waveguide sidewall roughness. The method for reducing the silicon-based optical waveguide sidewall roughness comprises steps of providing a substrate, forming a silicon-based optical waveguide line on the substrate, performing hydrogen annealing on the substrate containing the silicon-based optical waveguide line, wherein pressure of a chamber, on which hydrogen annealing is performed, is 20Torr-latmn. The method for reducing silicon-based optical waveguide sidewall roughness solves a problem that the silicon-based optical waveguide sidewall roughness is too big. The method of the invention is simple, can better maintain the features and sizes of the silicon-based optical waveguide lines and achieves a technical effect that the silicon-based optical waveguide sidewall roughness can be reduced under chamber pressure of 20Torr-latm.

Description

technical field [0001] The invention relates to the technical field of semiconductor integration, in particular to a method for reducing the roughness of the side wall of a silicon-based optical waveguide. Background technique [0002] During the preparation process of silicon-based optical waveguide devices, dry etching is used to form waveguide lines. Excessive roughness of the sidewall of the silicon line after dry etching will directly increase the propagation loss of light and affect the performance of the waveguide device. At present, the methods for reducing the roughness include: optimizing the etching process, wet oxidation-corrosion-wet oxidation-corrosion and other methods, but the improvement effect is limited. Contents of the invention [0003] The embodiments of the present application solve the problem of excessive roughness of the sidewall of the silicon-based optical waveguide in the prior art by providing a method for reducing the roughness of the sidewa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/13G02B6/12
CPCG02B6/12G02B6/13G02B2006/12169
Inventor 王桂磊张严波亨利·雷德森李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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