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Method for processing copper surface of interconnected wire

A copper surface, copper interconnect technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reducing the reliability of semiconductor devices, and achieve the effect of preventing the diffusion of copper atoms

Inactive Publication Date: 2014-05-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] In view of the problems of the prior art, the present invention provides a method of copper surface treatment in interconnection to simultaneously solve the problem of reduced reliability of semiconductor devices due to copper atom diffusion and electromigration

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  • Method for processing copper surface of interconnected wire

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Embodiment Construction

[0021] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0022] As a typical embodiment of the copper surface treatment method in a kind of interconnection of the present invention, such as figure 1 shown, including:

[0023] Step A1: providing an interconnection structure with copper interconnection lines;

[0024] Step A2: use plasma beam treatment or heat treatment on the surface of the copper interconnection in a reducing gas atmosphere to remove oxides, preferably, use a plasma beam treatment or heat treatment on the surface of the copper interconnection in a reducing gas atmosphere to remove Oxide, wherein, including using one or any combination of hydrogen, ammonia, helium, or argon, the gas flow rate is 10sccm to 1000sccm, and the temperature is 50 degrees Celsiu...

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Abstract

The invention discloses a method for processing the copper surface of an interconnected wire. A step of forming an aluminum cover layer on the surface of a copper interconnected wire by using selective aluminum deposition and a step of processing the aluminum cover layer by using a plasma beam in reductive gas atmosphere are executed cyclically. Aluminum atoms are gradually dissolved into the surface of the copper interconnected wire in order to form a copper aluminum alloy cover layer on the surface of the copper interconnected wire. The mobility of the copper aluminum alloy cover layer is less than that of the aluminum cover layer, so a problem of semiconductor device failure caused by electro mobility of the interconnected wire is suppressed while copper atoms are prevented from diffusing.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a copper surface treatment method in interconnection. Background technique [0002] With the development of semiconductor manufacturing technology, the area of ​​semiconductor chips is getting smaller and smaller, and at the same time, the number of semiconductor devices on a semiconductor chip is also increasing. In semiconductor circuits, signal transmission between semiconductor devices requires high-density metal interconnection lines. However, the large resistance and parasitic capacitance brought by these metal interconnection lines have become the main factors that limit the speed of semiconductor circuits. [0003] In the traditional semiconductor process, metal aluminum is generally used as a metal interconnection between semiconductor processes. With the development of semiconductor technology, metal aluminum interconnection has been gradually...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/7685H01L21/76856H01L21/76858H01L21/76885
Inventor 平延磊鲍宇
Owner SEMICON MFG INT (SHANGHAI) CORP
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