Complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on system on chip

Abstract

The invention provides a complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on a system on chip. The power amplifier is integrated on the system on chip (SOC) to achieve the function of output signal power amplification, and the power amplifier comprises a biasing circuit, a first stage amplifying circuit, a second stage amplifying circuit, and an output matching circuit. The power amplifier is realized by using a CMOS process and well integrated on the SOC, and thus, power control and pulse width modulation (PWM) can be achieved by using a single chip; compared with prior power amplifiers realized by using discrete components or III-V group compound semiconductors, the power amplifier has the advantages that dual power is adjustable, an individual external control chip is not required, costs of an application system are greatly saved, system debugging is facilitated, multi-band frequency output power is adjustable, and the power amplifier can be widely applied to various application in the range of 10 MHz to 1 GHz.

Description

technical field [0001] The invention relates to a multi-band radio frequency integrated circuit technology applied in SOC, in particular to a CMOS radio frequency power amplifier integrated in an on-chip system. Background technique [0002] The RF power amplifier is located at the back end of the transmitter and is used to amplify the signal and achieve a certain output power. It can be used in a wireless communication system to amplify the modulated signal and drive the antenna to realize wireless communication. It can also be used in wired systems to drive specific industrial control systems. For example, this power amplifier can be used in wired industrial control systems to drive LEP lamp controllers. [0003] In recent years, with the rapid development of mobile communication and industrial control technology, more and more circuit systems are integrated into a chip, and the system-on-chip technology is becoming more and more mature. However, the core part of traditi...

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of CMOS radio frequency power amplifier integrated in system on chip, be used to solve the complex structure of power amplifier in the prior art, the manufacturing cost is high, be affected greatly by temperature, Problems such as low output power

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