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Trench type insulated gate bipolar transistor capable of double-terminal control and preparation method thereof

A bipolar transistor and trench technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of weak reverse blocking capability, bidirectional devices with little forward blocking capability, etc. The effect of low power loss, elimination of tail current, and shortened turn-off time

Inactive Publication Date: 2017-05-31
XIAN JIEHANG ELECTRONICS SCI & TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a trench-type insulated gate bipolar transistor capable of double-terminal control, which solves the problem of the lack of bidirectional devices in the prior art and the weak forward blocking ability and reverse direction of conventional trench-type IGBTs. The problem of weak blocking ability

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  • Trench type insulated gate bipolar transistor capable of double-terminal control and preparation method thereof
  • Trench type insulated gate bipolar transistor capable of double-terminal control and preparation method thereof
  • Trench type insulated gate bipolar transistor capable of double-terminal control and preparation method thereof

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Embodiment Construction

[0038] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] The present invention provides a trench-type insulated gate bipolar transistor capable of double-terminal control, such as figure 2 As shown, including an N-Sub type substrate 19, a first groove and a second groove are respectively etched in the middle of the upper and lower surfaces of the N-Sub type substrate 19, and the first groove and the second groove are respectively provided with First SiO 2 Gate oxide layer 9 and the second SiO 2 Gate oxide layer 20, the first SiO 2 Gate oxide layer 9 and the second SiO 2 A first polysilicon gate 10 and a second polysilicon gate 21 are respectively deposited on the gate oxide layer 20, and the outer surfaces of the first polysilicon gate 10 and the second polysilicon gate 21 are respectively provided with a first electrode 1 and the second electrode 8, the first SiO 2 A first P+ well 4 i...

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Abstract

The invention discloses a double-end-controllable groove type insulated gate bipolar transistor which comprises a substrate. The two ends of the transistor are of structures with the same shape and variable parameters. The invention further discloses a preparation method of the double-end-controllable groove type insulated gate bipolar transistor. The double-end-controllable groove type insulated gate bipolar transistor effectively solves the problems that a common groove IGBT reverse blocking capability is poor and the turn-off time is long. The double-end-controllable groove type insulated gate bipolar transistor is high in applicability, and can replace a small circuit with bidirectional characteristics composed of a plurality of semiconductor devices, energy is greatly saved, the electric energy utilization rate is greatly improved, and the urgent affair that not enough power is supplied in China at present is relieved.

Description

technical field [0001] The invention belongs to the field of design and application of power semiconductor devices, and in particular relates to a trench-type insulated gate bipolar transistor capable of double-terminal control, and the invention also relates to a trench-type insulated gate bipolar transistor capable of double-terminal control method of preparation. Background technique [0002] Insulated gate bipolar transistor (IGBT) is a power semiconductor device controlled by gate voltage, which is composed of bipolar transistor and MOS field effect transistor. [0003] IGBT was developed in the early 1980s to solve the high conduction voltage drop of power electronic devices, especially the power field effect transistor MOSFET, which is difficult to manufacture with high blocking voltage and large on-state current characteristics, low operating frequency of power transistor GTR, and low drive current. Composite devices that appear due to large and other deficiencies. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/331H01L21/04H01L29/423H01L29/739H01L29/36
CPCH01L29/063H01L29/4236H01L29/66333H01L29/7397
Inventor 杨媛王秀慜冯松谢加强马丽高勇
Owner XIAN JIEHANG ELECTRONICS SCI & TECH CO LTD
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