Preparation method of graphene film

A graphene film and film technology, applied in graphene, nano-carbon and other directions, can solve the problems of waste of resources, complicated preparation process of graphene wave film, human and environmental damage, etc.

Inactive Publication Date: 2014-04-30
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the complex preparation process of the above-mentioned graphene wave film, and a large number of organic solvents are used in the preparation process, which not only wastes resources, but also causes technical problems such as harm to the human body and the environment to provide a repeatable, No introduction of impurities, convenient and simple graphene transfer method

Method used

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Examples

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Effect test

Embodiment 1

[0021] A kind of preparation method of graphene thin film, specifically comprises the steps:

[0022] (1) Dissolve polymethyl methacrylate in acetone solution to form a polymethyl methacrylate acetone solution with a concentration of 3g / L, and then control the polymethyl methacrylate acetone solution with a concentration of 3g / L The dropping speed rate is 0.2ml / min and dripped on the metal sheet to form a polymethyl methacrylate film with a thickness of 100-500nm;

[0023] Described metal sheet is the copper foil that thickness is 0.2mm;

[0024] The metal flakes were cleaned with dilute hydrochloric acid, acetone, ethanol, and deionized water for 10 minutes in order to remove impurities such as oxides and oil stains on the surface of the metal flakes;

[0025] The quartz glass slides are successively cleaned with acetone, ethanol, and deionized water in an ultrasonic cleaner for 10 minutes to remove impurities on the surface of the quartz glass slides;

[0026] (2) Cover th...

Embodiment 2

[0029] A kind of preparation method of graphene thin film, specifically comprises the steps:

[0030] (1) Dissolve polymethyl methacrylate in acetone solution to form a polymethyl methacrylate acetone solution with a concentration of 3g / L, and then control the polymethyl methacrylate acetone solution with a concentration of 3g / L The dropping speed rate is 0.2ml / min and dripped on the metal sheet to form a polymethyl methacrylate film with a thickness of 100-500nm;

[0031] Described metal sheet is the copper foil that thickness is 0.2mm;

[0032] The metal flakes were cleaned with dilute hydrochloric acid, acetone, ethanol, and deionized water for 10 minutes in order to remove impurities such as oxides and oil stains on the surface of the metal flakes;

[0033] The quartz glass slides are successively cleaned with acetone, ethanol, and deionized water in an ultrasonic cleaner for 10 minutes to remove impurities on the surface of the quartz glass slides;

[0034] (2) Cover th...

Embodiment 3

[0037] A kind of preparation method of graphene thin film, specifically comprises the steps:

[0038] (1) Dissolve polymethyl methacrylate in acetone solution to form a polymethyl methacrylate acetone solution with a concentration of 3g / L, and then control the polymethyl methacrylate acetone solution with a concentration of 3g / L The dropping speed rate is 0.2ml / min and dripped on the metal sheet to form a polymethyl methacrylate film with a thickness of 100-500nm;

[0039] Described metal sheet is the copper foil that thickness is 0.2mm;

[0040] The metal flakes were cleaned with dilute hydrochloric acid, acetone, ethanol, and deionized water for 10 minutes in order to remove impurities such as oxides and oil stains on the surface of the metal flakes;

[0041] The quartz glass slides are successively cleaned with acetone, ethanol, and deionized water in an ultrasonic cleaner for 10 minutes to remove impurities on the surface of the quartz glass slides;

[0042] (2) Cover th...

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Abstract

The invention discloses a preparation method of a graphene film. The preparation method comprises the steps: firstly, dissolving polymethyl methacrylate into acetone to obtain a polymethyl methacrylate and acetone liquid; then, dropwise adding the polymethyl methacrylate and acetone liquid on a metal to form a layer of polymethyl methacrylate film; covering a quartz glass slide on the polymethyl methacrylate film; then, simultaneously placing the metal sheet, the polymethyl methacrylate film on the metal sheet and the covered quartz glass slide into a high-temperature annealing furnace with a nitrogen condition, and carrying out high-temperature annealing while controlling the temperature at 800-1000 DEG C, wherein the polymethyl methacrylate is decomposed into a graphene film under the catalytic action of the metal in the metal film, and the graphene film is evaporated at a high temperature and is transferred on the quartz glass slide; and next, naturally cooling to room temperature to obtain a layer of graphene film on the quartz glass slide. The preparation method disclosed by the invention is simple and convenient to implement and capable of transferring graphene under the condition that the graphene is not damaged or polluted.

Description

technical field [0001] The invention relates to a preparation method of a graphene film, in particular to a preparation method of an in-situ metal catalytic decomposition and transfer of a graphene film, specifically involving the preparation of graphene by metal in-situ decomposition, and finally transferring the graphene by thermal evaporation To the target substrate, so that the graphene can be directly transferred to the target substrate without intermediate treatment. Background technique [0002] Graphene is a new type of transparent conductive film material. The transmittance of visible light of single-layer graphene is as high as 97.7%. It also has good electrical conductivity, flexibility and mechanical strength. Due to its superior optical and electrical properties, it has attracted more and more attention in the fields of scientific research and engineering applications. At present, it has been widely used in micro-nano electronic devices, electronic energy stora...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 丁亮亮洪瑞金宋晓张大伟陶春先
Owner UNIV OF SHANGHAI FOR SCI & TECH
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