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A process for removing phosphosilicate glass from monocrystalline silicon solar cells

A technology for removing phosphorus from solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the hydrophilic phenomenon on the surface of silicon chips and affect the performance of cells, so as to reduce chromatic aberration, improve the life of minority carriers, and achieve uniform color Effect

Active Publication Date: 2016-05-11
NINGXIA YINXING ENERGY
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AI Technical Summary

Problems solved by technology

[0003] However, the existing process cannot meet the requirements of dephosphorous silicon glass for 125*125mm physical metallurgical monocrystalline silicon solar cells, and there will be a phenomenon of hydrophilicity on the surface of the silicon wafer, which will seriously affect the performance of the battery.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0018] (1) Remove impurities such as damaged silicon wafers in the six tanks of the SFQ-1504ZT PSG removal machine produced by the 45th Research Institute of China Electronics Technology Group, and rinse the walls of each tank with pure water;

[0019] (2) Inject pure water into the 1# tank, the water level reaches the mark line of the 1# acid tank, 100L, then add 16L of electronic pure hydrofluoric acid with a mass concentration of 49%, and then inject pure water to the upper mark of the 1# acid tank The engraved line is 30L, and finally a hydrofluoric acid solution is obtained, with a tank volume of 150L; fill 2~6# tanks with pure water, and the tank volume is 150L;

[0020] (3) Put the basket loaded with silicon wafers into the loading port of the dephosphorous silicon glass cleaning machine;

[0021] (4) Run the PSG cleaning machine for cleaning, set the phosphorus washing time of 1# acid tank to 180s; wait for the mechanical arm to grab the basket containing the silicon w...

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Abstract

The invention relates to a technology for removing phosphorosilicate glass of single crystalline silicon solar cells. The technology is used for removing phosphorosilicate glass formed on the surface of a silicon chip after diffusion. The technology is characterized by comprising the following steps: (1) impurities in six grooves of a groove-type PSG-removing cleaning machine are removed; (2) 100L of pure water is poured into an acid groove No.1, 16L of electronic pure hydrofluoric acid at the mass concentration of 49% is added, and 30L of pure water is then poured to finally obtain a hydrofluoric acid solution; a fast drain groove No.2, a groove No.3, a groove No.4, a groove No.5 and a groove No.6 are all fully filled with pure water; (3) a bucket filled with silicon chips is put into a feed inlet of a phosphorosilicate glass removing cleaning machine; (4) the groove-type PSG-removing cleaning machine is operated; and (5) the bucket is taken out after removing is finished and is rapidly placed into a drying machine for drying. According to the invention, phosphorosilicate glass formed during the silicon chip diffusion process can be removed so as to make the PSG-removed silicon chips meet technological requirements. Hydrophilic phenomenon on the surface of the silicon chips is avoided, and minority carrier lifetime after diffusion is prolonged.

Description

technical field [0001] The invention relates to a process for removing phosphosilicate glass from a monocrystalline silicon solar cell, which is used for removing the phosphosilicate glass formed on the surface of a silicon wafer after diffusion. Background technique [0002] Solar energy is an inexhaustible renewable energy source for human beings. It is also clean energy and does not produce any environmental pollution. In recent years, solar energy has been widely used by humans, especially in the field of photovoltaic power generation, which has developed rapidly. Solar cells are used to convert solar energy into electrical energy. The manufacturing process of solar cells is relatively complicated. During the phosphorus diffusion process, a layer of SiO2 containing phosphorus will be formed on the surface of the silicon wafer, which is called phosphosilicate glass (PSG). Phospho-silicate glass increases the recombination of electrons in the emission area, resulting in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 丁继业安百俊谢余才陈刚刚田治龙任春兰何晓玢葛瑞丽曲岩
Owner NINGXIA YINXING ENERGY
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