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Preparation method of diamond doped silicon carbide (SiC) ceramics with high heat conductivity

A diamond and high thermal conductivity technology, applied in the field of materials, can solve the problems of silicon or graphite, high experimental conditions, and inability to prepare large-scale Diamond/SiC plates on a large scale, so as to avoid residual silicon, excellent performance, and exclude high temperature and high pressure difficult effect

Inactive Publication Date: 2015-03-04
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problems existing in the prior art that require high experimental conditions, always have silicon or graphite in the prepared materials, and cannot prepare large-scale Diamond / SiC plates on a large scale, the present invention proposes a Diamond / SiC composite Material preparation method

Method used

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  • Preparation method of diamond doped silicon carbide (SiC) ceramics with high heat conductivity
  • Preparation method of diamond doped silicon carbide (SiC) ceramics with high heat conductivity
  • Preparation method of diamond doped silicon carbide (SiC) ceramics with high heat conductivity

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Embodiment 1

[0024] This embodiment is a preparation method of a Diamond / SiC composite material, and the specific process is:

[0025] Raw material preparation: 30-70wt.% of diamond powder (average particle size 7 microns), 10-30wt.% of solvent toluene and isopropanol, 1-5wt.% of dispersant triethyl phosphate, binder polyvinyl alcohol Butyraldehyde 1-5wt.%, defoamer n-butanol and ethylene glycol each 0.1-2wt.%, plasticizer glycerin and dioctyl phthalate each 0.1-3wt.%;

[0026] Step 1: Preparation of diamond slurry casting substrate: the specific process is:

[0027] a. Mix diamond micropowder, solvent toluene and isopropanol, and dispersant triethyl phosphate in the raw materials of step 1 according to the proportioning ratio and carry out ball milling. The ball milling time is 7h, and the ball milling drum speed is 120r / min;

[0028] b. Take out the aforementioned ball-milled slurry, and then add plasticizer glycerol and dioctyl phthalate, defoamer n-butanol and ethylene glycol, and bin...

Embodiment 2

[0034]Raw material preparation: diamond micropowder (average particle size 20 microns) 30-70wt.%, solvent toluene and isopropanol 10-30wt.%, dispersant triethyl phosphate 1-5wt.%, binder polyvinyl alcohol Butyraldehyde 1-5wt.%, defoamer n-butanol and ethylene glycol each 0.1-2wt.%, plasticizer glycerin and dioctyl phthalate each 0.1-3wt.%;

[0035] Step 1: Preparation of diamond slurry casting substrate: the specific process is:

[0036] a. Mix diamond micropowder, solvent toluene and isopropanol, and dispersant triethyl phosphate in the raw materials of step 1 according to the proportioning ratio and carry out ball milling. The ball milling time is 7h, and the ball milling drum speed is 120r / min;

[0037] b. Take out the aforementioned ball-milled slurry, and then add plasticizer glycerol and dioctyl phthalate, defoamer n-butanol and ethylene glycol, and binder polyvinyl butyral according to the ratio. Then put it into the drum ball mill again, the ball milling time and the ...

Embodiment 3

[0043] Raw material preparation: diamond micropowder (average particle size 30 microns) 30-70wt.%, solvent toluene and isopropanol 10-30wt.%, dispersant triethyl phosphate 1-5wt.%, binder polyvinyl alcohol Butyraldehyde 1-5wt.%, defoamer n-butanol and ethylene glycol each 0.1-2wt.%, plasticizer glycerin and dioctyl phthalate each 0.1-3wt.%;

[0044] Step 1: Preparation of diamond slurry casting substrate: the specific process is:

[0045] a. Mix diamond micropowder, solvent toluene and isopropanol, and dispersant triethyl phosphate in the raw materials of step 1 according to the proportioning ratio and carry out ball milling. The ball milling time is 7h, and the ball milling drum speed is 120r / min;

[0046] b. Take out the aforementioned ball-milled slurry, and then add plasticizer glycerol and dioctyl phthalate, defoamer n-butanol and ethylene glycol, and binder polyvinyl butyral according to the ratio. Then put it into the drum ball mill again, the ball milling time and the...

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Abstract

The invention relates to a preparation method of diamond doped silicon carbide (SiC) ceramics with high heat conductivity. A silicon carbide base body is deposited in a porous diamond perform by a tape casting process combined with a chemical vapor deposition method; the method comprises the steps of preparing diamond slurry with different particle sizes (7-50mum) and then carrying out a casting experiment, drying a substrate formed by the cast diamond particles and polyvinyl butyral at room temperature and setting aside, placing into a CVI (Chemical Vapor Infiltration) deposition furnace for deposition of the silicon carbide base body to obtain a diamond / silicon carbide substrate, carrying out repeated casting and deposition on the surface of the diamond / silicon carbide substrate, and finally, obtaining the diamond / silicon carbide composite material sample. The prepared diamond / silicon carbide composite material has diamond and silicon carbide phases without other impurities, and the diamond is distributed uniformly in the composite material and can be well combined with the silicon carbide base body.

Description

technical field [0001] The invention relates to the field of materials, in particular to a method for preparing a diamond-doped SiC composite material with high thermal conductivity. Background technique [0002] Diamond / SiC composite materials have the characteristics of high hardness, high thermal conductivity and low thermal expansion, and can be used as third-generation electronic packaging materials with excellent comprehensive performance and high-performance wear-resistant materials. Among them, Diamond / SiC composite materials have been successfully prepared by methods such as hot isostatic pressing (HIP), high temperature and high pressure sintering (HPHT), reaction melt infiltration gas phase silicon (RMI) and precursor pyrolysis conversion (PIP). Vapor deposition (CVI) technology to prepare Diamond / SiC composite materials, there is no relevant technical report. However, to prepare diamond / SiC composite materials by CVI technology, a uniform porous diamond preform ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622
Inventor 刘永胜冯薇胡成浩成来飞张青
Owner NORTHWESTERN POLYTECHNICAL UNIV
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