Cleaning agent for solar energy monocrystalline silicon wafer
A single crystal silicon wafer and cleaning agent technology, which is applied in the direction of detergent composition, soap detergent composition, surface active non-soap compound and cleaning composition, etc., can solve silicon wafer corrosion, incomplete cleaning, environmental pollution, etc. problems, achieve the effect of less acid and alkali consumption, prevent pollution and reduce the cost of use
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0018] 1. Preparation of cleaning agent: Dissolve 8g of potassium hydroxide in parts by mass, 1g of isomeric alcohol polyoxyethyl ether and 1g of isooctanyl polyoxyethylene ether in 40g of water to prepare component A with a total mass part of 50g. Mixture EDTA·4Na3g is dissolved in 47g of water to prepare B component with a total mass of 50g. When using, mix A and B components, dilute 15 times, and prepare a working solution;
[0019] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1kg of the working solution prepared in step 1 at 50°C, firstly pre-wash the solid insoluble matter through ultrasonic pre-washing, then perform ultrasonic cleaning, and finally perform several times of clear water Centrifuge and dry after rinsing. The cleaning effect is shown in Table 1.
Embodiment 2
[0021] 1. Preparation of cleaning agent: Dissolve 9g of potassium hydroxide in parts by mass, 2g of isomeric alcohol polyoxyethyl ether and 1g of isooctanyl polyoxyethylene ether in 38g of water to prepare component A with a total mass part of 50g. Mixture EDTA·2Na1g is dissolved in 49g of water to prepare B component with a total mass of 50g. When using, mix A and B components, dilute 20 times, and prepare a working solution;
[0022] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1kg of the working solution prepared in step 1 at 55°C, first pre-wash by ultrasonic to wash away the solid insoluble matter, then perform ultrasonic cleaning, and finally perform multiple times Rinse with water and dry by centrifugation. The cleaning effect is shown in Table 1.
Embodiment 3
[0024] 1. Preparation of cleaning agent: dissolve 8g of potassium hydroxide, 2g of APG and 1g of isooctyl alcohol polyoxyethylene ether in 39g of water to form component A with a total mass of 50g, and dissolve 2g of chelating agent ammonium citrate Mix 48g of water to prepare Component B with a total mass of 50g. When using, mix Components A and B, dilute 10 times, and prepare a working solution;
[0025] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1 kg of the working solution prepared in step 1 at 60°C, first pre-wash by ultrasonic to wash off the solid insoluble matter, then perform ultrasonic cleaning, and finally perform multiple times Rinse with water and dry by centrifugation. The cleaning effect is shown in Table 1.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com