Method for cleaning surface of monocrystalline silicon wafer
A single-crystal silicon wafer, pre-cleaning technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of waste of silicon wafers, affecting yield, long texturing time, etc., and reducing the number of reworked wafers , The effect of reducing the scrap ratio and shortening the texturing time
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[0013] First, add hydrogen peroxide, sodium hydroxide and water into the pre-cleaning tank to obtain a mixed solution. In the mixed solution, the concentration of hydrogen peroxide is 2.7%, and the concentration of NaOH is 0.17%. Clean the single crystal silicon wafer with ultrasound, specifically an ultrasonic generator Ultrasonic waves are emitted from the bottom of the tank for oscillating cleaning. Ultrasonic power and frequency range: 1.8kW, frequency 20-40kHz, when cleaning, the mixed solution must be immersed (in this example, the top of the single crystal silicon wafer is 1cm below the liquid surface) to pass through the single crystal silicon wafer. The time is 500s.
[0014] If it is found that there is still a small amount of organic matter, impurities or other dirt on the surface of the cleaned monocrystalline silicon wafer, you can also add the cleaned monocrystalline silicon wafer to the cleaning solution and immerse it (in this example, the top of the monocrysta...
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