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Method for cleaning surface of monocrystalline silicon wafer

A single-crystal silicon wafer, pre-cleaning technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of waste of silicon wafers, affecting yield, long texturing time, etc., and reducing the number of reworked wafers , The effect of reducing the scrap ratio and shortening the texturing time

Active Publication Date: 2014-03-26
NINGXIA YINXING ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] After the monocrystalline silicon rod is cut into silicon wafers, the damaged layer and oil stains on the surface should be cleaned. Since the silicon wafer manufacturer does not clean it, the silicon wafer is held by hand during the silicon wafer inspection and packaging process, and the sweat and other organic matter stick to it. Attached to the surface of silicon wafers, there will be a lot of oil stains, white spots, finger prints and other dirty sheets during the production process of monocrystalline solar cells, which will eventually affect the appearance and conversion efficiency of cells
[0003] At present, in the cleaning and texturing process, pure water and sodium hydroxide are added to the ultrasonic tank to pre-clean the surface of the silicon wafer. However, for silicon wafers with a dirty surface by physical metallurgy, this process cannot completely clean the oil on the surface of the silicon wafer. , white spots, fingerprints and other dirt, resulting in a long time for making texture, which can only be reworked or scrapped, resulting in the waste of a large number of silicon wafers and a large amount of chemicals, and the long cleaning time for texture seriously affects the output

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] First, add hydrogen peroxide, sodium hydroxide and water into the pre-cleaning tank to obtain a mixed solution. In the mixed solution, the concentration of hydrogen peroxide is 2.7%, and the concentration of NaOH is 0.17%. Clean the single crystal silicon wafer with ultrasound, specifically an ultrasonic generator Ultrasonic waves are emitted from the bottom of the tank for oscillating cleaning. Ultrasonic power and frequency range: 1.8kW, frequency 20-40kHz, when cleaning, the mixed solution must be immersed (in this example, the top of the single crystal silicon wafer is 1cm below the liquid surface) to pass through the single crystal silicon wafer. The time is 500s.

[0014] If it is found that there is still a small amount of organic matter, impurities or other dirt on the surface of the cleaned monocrystalline silicon wafer, you can also add the cleaned monocrystalline silicon wafer to the cleaning solution and immerse it (in this example, the top of the monocrysta...

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PUM

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Abstract

The invention relates to a method for cleaning the surface of a monocrystalline silicon wafer. The method is characterized by comprising the following steps: first of all, adding hydrogen peroxide (H2O2) and sodium hydroxide (NaOH) in a precleaning tank to obtain a mixed solution, in the mixed solution, the concentration of the hydrogen peroxide being 2% to 3%, and the concentration of NaOH being 0.15% to 0.3%; and cleaning the monocrystalline silicon wafer through cooperation with ultrasonic sound, the monocrystalline silicon wafer being immersed into the mixed solution during cleaning. Tests show that by adoption of the method provided by the invention, the texturing time is shortened, the output is increased, the smudginess on the surface of the silicon wafer such as oil stains, white spots, fingerprints and the like is completely cleaned, the quantity of reworking wafers is substantially reduced, silicon wafer discard proportion is reduced, and chemical use amount for reworking after texturing of the silicon wafer is correspondingly reduced.

Description

technical field [0001] The invention relates to a method for cleaning the surface of a single crystal silicon chip. Background technique [0002] After the monocrystalline silicon rod is cut into silicon wafers, the damaged layer and oil stains on the surface should be cleaned. Since the silicon wafer manufacturer does not clean it, the silicon wafer is held by hand during the silicon wafer inspection and packaging process, and the sweat and other organic matter stick to it. Attached to the surface of silicon wafers, there will be a lot of oil stains, white spots, finger prints and other dirty sheets during the production process of monocrystalline solar cells, which will eventually affect the appearance and conversion efficiency of the cells. [0003] At present, in the cleaning and texturing process, pure water and sodium hydroxide are added to the ultrasonic tank to pre-clean the surface of the silicon wafer. However, for silicon wafers with a dirty surface by physical me...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02096
Inventor 彭文强廖建刚
Owner NINGXIA YINXING ENERGY
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