Method for growing semi-polarity GaN (gallium nitride) thick film

Abstract

The invention provides a method for growing a semi-polarity GaN (gallium nitride) thick film. The method comprises the following steps of step A, extending a substrate to form a semi-polarity GaN template layer; step B, preparing a TiN (titanium nitride) mask layer with a nano-grade net structure on the GaN template layer; step C, preparing a self-assembling nano-spherical mask layer on the TiN mask layer; and step D, continuing to extend the substrate, which is sequentially deposited with the semi-polarity GaN template layer, the TiN mask layer and the self-assembling nano-spherical mask layer, to form the semi-polarity GaN thick film. By adopting the method, the stress in the semi-polarity GaN thick film can be effectively released, and the heteroepitaxy of the high-quality and large-area semi-polarity GaN thick film is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to a method for growing a semipolar GaN thick film. Background technique [0002] At present, GaN-based light-emitting diodes (LEDs) are mainly grown on c-plane sapphire, because the polarization discontinuity at the heterojunction causes InGaN / GaN quantum well band bending and quantum confinement Stark effect (QCSE), which reduces the radiation Recombination efficiency, the peak wavelength of luminescence is red-shifted, and at the same time, the peak wavelength of luminescence is blue-shifted with the increase of current. When the luminous spectrum develops from blue light to green light, the luminous efficiency of GaN-based LEDs decreases sharply. Compared with c-plane GaN, semipolar plane GaN has many advantages, such as reducing or eliminating the polarization electric field, stress anisotropy in quantum wells leads to light polarization, and some semipol...

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Problems solved by technology

However, the traditional lateral epitaxial overgrowth has the following disadvantages: 1) In the mask preparation process, a photolithography process is required, especially for the secondary lateral epitaxial growth, multiple photolithography and epitaxy are required, and the process is complex and costly ; 2) The pattern is micron-scale, and there are still a large number of dislocations in the "window" region of the epitaxial film after growth, so it is difficult to obtain a large-area uniform epitaxial film

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