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Embedded film resistor material and its preparation method

A thin film resistor, embedded technology, applied in the direction of coating resistance materials, resistors, non-adjustable metal resistors, etc.

Active Publication Date: 2014-03-19
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Domestically, embedded thin film resistor materials are mostly in the research and development stage, and have not yet fully entered the industrialization stage.

Method used

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  • Embedded film resistor material and its preparation method
  • Embedded film resistor material and its preparation method
  • Embedded film resistor material and its preparation method

Examples

Experimental program
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preparation example Construction

[0046] see figure 1 , the preparation method of the buried type thin film resistance material of one embodiment, comprises the following steps:

[0047] Step S110: providing a substrate.

[0048] The substrate is preferably a low profile flexible copper foil.

[0049] The substrate was ultrasonically cleaned in anhydrous acetone, anhydrous ethanol, and deionized water for 10 minutes each, then blown dry with a nitrogen gun, and then flattened with a clean glass plate for use.

[0050] Step S120: Form a nickel-chromium-tungsten-carbon thin film on the substrate by sputtering to obtain an embedded thin-film resistance material, wherein the elements of the nickel-chromium-tungsten thin film include nickel 50-76%, chromium 10- 18%, carbon 10-30% and tungsten 0.5-5%.

[0051] Place the nickel-chromium alloy target (NiCr) in the cathode target position 1 of the vacuum sputtering chamber, the carbon target (C) in the cathode target position 2, and the tungsten target (W) in the cath...

Embodiment 1

[0069] Fabrication of embedded thin film resistor materials

[0070] (1) Ultrasonic clean the low-profile flexible copper foil with an area of ​​9cm×9cm in anhydrous acetone, anhydrous alcohol and deionized water for 10 minutes, then blow dry with a nitrogen gun, and then flatten it with a clean glass plate for use ;

[0071] (2) Place the flattened low-profile flexible copper foil on the rotating workpiece holder in the vacuum sputtering chamber, and close the vacuum sputtering chamber. Turn on the vacuum system, when the vacuum degree of the vacuum sputtering chamber reaches 4.0×10 -5 In the case of Tusla, argon gas is introduced, the gas flow rate is 25 sccm, the ionization power supply is started, and the surface of the substrate is ionized and cleaned for 10 minutes, and the sputtering power supply of the nickel-chromium alloy target, carbon target and tungsten target is immediately turned on. Sputter for 4 minutes to form a nickel-chromium-tungsten carbon film deposite...

Embodiment 2

[0074] Fabrication of embedded thin film resistor materials

[0075] (1) Ultrasonic clean the low-profile flexible copper foil with an area of ​​9cm×9cm in anhydrous acetone, anhydrous alcohol and deionized water for 10 minutes, then blow dry with a nitrogen gun, and then flatten it with a clean glass plate for use ;

[0076] (2) Place the flattened low-profile flexible copper foil on the rotating workpiece holder in the vacuum sputtering chamber, and close the vacuum sputtering chamber. Turn on the vacuum system, when the vacuum degree of the vacuum sputtering chamber reaches 4.0×10 -5 In the case of Tusla, argon gas is introduced, the gas flow rate is 25 sccm, the ionization power supply is started, and the surface of the substrate is ionized and cleaned for 10 minutes, and the sputtering power supply of the nickel-chromium alloy target, carbon target and tungsten target is immediately turned on. Sputtering for 4 minutes to form a nickel-chromium-tungsten carbon thin film ...

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Abstract

The invention relates to an embedded film resistor material and a preparation method. The embedded film resistor material comprises the following components by atom percentages: 50-76% of nickel, 10-18% of chromium, 10-30% of carbon and 0.5-5% of tungsten. A magnetron sputtering technology is used for depositing nickel atom, chromium atom, carbon atom and tungsten atom on a copper foil substrate to obtain a nickel chromium carbon tungsten film, and experiments show that the embedded film stock solution using the nickel chromium carbon tungsten film has stable electrical property and high sheet resistance.

Description

technical field [0001] The invention relates to the technical field of electronic materials and electronic components, in particular to an embedded thin film resistance material and a preparation method thereof. Background technique [0002] The development trend of high performance and miniaturization of electronic components requires that the number of electronic components mounted per unit area of ​​printed circuit boards continues to increase, resulting in supersaturation of the surface area of ​​printed circuit boards. Compared with traditional discrete resistors, embedded thin film resistors (buried resistors) can save wiring distance, reduce the number of mounted components, reduce the size and weight of circuit boards; and can reduce parasitic inductance and surface resistance during signal transmission. Inductive reactance generated during placement or plug-in processing; can improve the impedance matching ability of the line; can reduce signal crosstalk, noise and ...

Claims

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Application Information

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IPC IPC(8): C22C19/05C23C14/34C23C14/16H01C7/00H01C17/12
Inventor 孙蓉赖莉飞符显珠
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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