Back contact crystalline silicon battery, treatment method for non-illuminated surface of back contact crystalline silicon battery and preparation method for back contact crystalline silicon battery

A crystalline silicon cell and processing method technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of low photoelectric conversion efficiency of crystalline silicon cells, and achieve the effects of increasing photoelectric conversion efficiency, enhancing physical strength, and reducing recombination rate.

Active Publication Date: 2014-03-12
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved by the present invention is to overcome the defect of low photoelectric conversion efficiency of crystalline silicon cells in the prior art, thereby providing a back contact crystalline silicon cell with high photoelectric conversion efficiency

Method used

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  • Back contact crystalline silicon battery, treatment method for non-illuminated surface of back contact crystalline silicon battery and preparation method for back contact crystalline silicon battery
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  • Back contact crystalline silicon battery, treatment method for non-illuminated surface of back contact crystalline silicon battery and preparation method for back contact crystalline silicon battery

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Embodiment 1

[0056] This embodiment provides a rear contact silicon cell, such as Figure 2-4 As shown, it includes a silicon substrate 100. The silicon substrate 100 has a light-receiving surface and a non-light-receiving surface. On the non-light-receiving surface, there are a P-type region converging conductive strip 108 and an N-type region converging conductive strip 112, which are formed into a P-N-P-N type Arrangement structure, the P-type zone bussing conductive strip 108 is connected to the positive metal electrode 110, the N-type zone bussing conductive strip 112 is connected to the negative electrode metal electrode, covering the P-type zone bussing conductive strip 108 and the N-type zone The bus conductive strip 112 is arranged on the five-layer Bragg reflective layer 200 on the non-light-receiving surface. The Bragg reflective layer 200 is arranged along the thickness direction of the crystalline silicon cell, and each layer of the Bragg reflective layer 200 includes a first ...

Embodiment 2

[0060] This embodiment provides a rear contact crystalline silicon cell, which is a modification based on Embodiment 1. The difference is that in this embodiment, the light with a central wavelength λ=600nm is taken as the target reflected light, and the formula d1=d2 =1 / 8λ is calculated to obtain d1=d2=75nm, according to this data, 5 layers of the above-mentioned Bragg reflection layer 200 are deposited on the non-light-receiving surface, and the data obtained from the test are as follows Image 6 As shown, the maximum reflectance 302 of light in the wavelength range of 400-800nm ​​is 65%, the average reflectance 300 is 30%, and Figure 5 The data in is not much different, but the reflection effect is greatly enhanced compared with the reflection effect of the existing passivation layer.

[0061] As a modification to this embodiment, the Bragg reflection layer 200 may be provided with 2-8 layers, all of which can achieve the purpose of the invention.

Embodiment 3

[0063] This embodiment provides a rear contact silicon cell, which is a modification based on Embodiment 1, the difference is that the first material in this embodiment is SiO 2 , the thickness of the first Bragg reflection film formed by it is d1, and the second material is TiO 2 , the thickness of the second Bragg reflection film formed by it is d2, where SiO 2 The refractive index n 1 =1.46,TiO 2 The refractive index n 2 =2.35.

[0064] Take the center wavelength as λ 1 =500nm and λ 2 =800nm ​​light reflects light for two targets, and passes the formula d1=(2λ 1 -λ 2 ) / (2n 1 ), d2=(λ 2 -λ 1 ) / (2n 2 ) are calculated respectively to obtain d1=68.2nm, d2=78.9nm, according to this data, 5 layers of the above-mentioned Bragg reflection layer 200 are deposited on the non-light-receiving surface, and the data obtained by the test are as follows Figure 7 As shown, the maximum reflectance 302 for light in the wavelength range of 400-800nm ​​is 93%, and the average refle...

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Abstract

The invention provides a back contact crystalline silicon battery, a treatment method for a non-illuminated surface of the back contact crystalline silicon battery and a preparation method for the back contact crystalline silicon battery. The back contact crystalline silicon battery comprises a silicon substrate, wherein the silicon substrate is provided with an illuminated surface and the non-illuminated surface; P-type region confluence conductive strips and N-type region confluence conductive strips are arranged on the non-illuminated surface to form a P-N-P-N type arrangement structure; the P-type region confluence conductive strips are connected with a positive metal electrode; the N-type region confluence conductive strips are connected with a negative metal electrode; therefore, 2-8 bragg reflection layers of the P-type region confluence conductive strips and the N-type region confluence conductive strips, which are arranged on the non-illuminated surface, can be covered; the bragg reflection layers are arranged along the thickness direction of the crystalline silicon battery; each bragg reflection layer comprises a first bragg reflection film made of a first material and a second bragg reflection film made of a second material; the first bragg reflection films and the second bragg reflection films are stacked in a staggered manner along the thickness direction of the crystalline silicon battery; the reflectivity n2 of the second material is higher than the reflectivity n1 of the first material.

Description

technical field [0001] The invention relates to a back-contact crystalline silicon cell, a method for treating a non-light-receiving surface and a preparation method thereof, and belongs to the technical field of crystalline silicon solar cells. Background technique [0002] The solar photovoltaic power generation industry has developed very rapidly. Since 2007, China's photovoltaic production has been occupying the first place in the world. The product types are mainly crystalline silicon cells and modules, accounting for nearly 90% of the market share. Although China ranks first in photovoltaic manufacturing, the photoelectric conversion efficiency of photovoltaic products is at a medium level. [0003] Crystalline silicon solar cell is a kind of solar cell, its main function is to convert the sun's light energy into electrical energy. Crystalline silicon solar cells receive photons from the sun to generate carriers, and carry out carrier recombination. When the carrier ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 顾世海张庆钊兰立广丁建
Owner 紫石能源有限公司
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