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A high-power microwave pulse circular waveguide detection structure and method

A detection method and circular waveguide technology, which are applied in the measurement of electric power, measurement device, and measurement of electric variables, etc., can solve the problems such as the detection device and method that have not yet been seen, achieve short momentum relaxation time, improve measurement accuracy, and ensure accuracy. Effect

Active Publication Date: 2016-04-27
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

But up to now, there is no detection device and method for other waveguide structures based on the hot carrier effect

Method used

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  • A high-power microwave pulse circular waveguide detection structure and method
  • A high-power microwave pulse circular waveguide detection structure and method
  • A high-power microwave pulse circular waveguide detection structure and method

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Embodiment Construction

[0030] In order to realize the online real-time detection of high-power microwave pulses, the present invention aims at the characteristics that most high-power microwave sources use circular waveguides as the transmission structure (such as relativistic return wave oscillators), and selects circular waveguides as the detection chip based on the semiconductor hot carrier effect The carrier has designed a reasonable semiconductor detection chip structure, which can realize the matching connection with the high-power microwave source without any structural changes of the microwave source, and meet the detection requirements of different common circular waveguide modes. Taking the detection of X-band high-power microwave pulses as an example, the present invention provides a design scheme based on a circular waveguide detection structure with a radius of 25mm:

[0031] 1. Circular waveguide:

[0032] express opinion figure 1 with figure 2 , the radius R of the circular wavegui...

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Abstract

The invention designs a large-power microwave-pulse circular-waveguide detection structure which uses a hot carrier effect of a highfield in a semiconductor as the basic work principle and realizes real-time detection of high-power microwave pulses of different modes in a circular waveguide according to the change of bulk resistance of a semiconductor detection chip. The detection structure includes the circular waveguide and the semiconductor detection chip. In the structure, the bearable peak power of the microwave pulses reaches hundreds of megawatts and the response speed is lower than 1ns. The manufacturing difficulty of the detection chip and the integration difficulty of the detection structure are low. The detection structure is applicable to online real-time detection of a microwave-band high-power pulse wave source and polarization-direction monitoring and mode symmetry analysis of the microwave pulses and the like.

Description

technical field [0001] The invention belongs to the design scheme of an electromagnetic wave detection device, in particular to a circular waveguide detection structure and method for real-time detection of high-power pulses in the microwave section. Background technique [0002] With the continuous development of high-power microwave technology, high-power microwave has entered the stage of application and even practicality in many aspects. As a key device for application, high-power microwave sources mostly radiate microwave pulses generated by high-frequency structures into free space through circular waveguides with horn antennas integrated at the ends, which often include functional structures such as circular waveguide mode conversion and curved waveguides. At present, one kind of output pulse detection of high-power microwave source is to receive and detect in the radiation field, but in the application, this method cannot give the output state of the microwave source...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R21/00G01R29/00
Inventor 王光强王建国朱湘琴王雪锋李爽
Owner NORTHWEST INST OF NUCLEAR TECH
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