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High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof

A manufacturing method and partial discharge technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as poor controllability, complicated process, and no reduction of electric field intensity at the maximum value of the electric field, and achieve an increase in pass rate Effect

Inactive Publication Date: 2014-02-19
XIAN YONGDIAN ELECTRIC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process is more complex and less controllable
[0010] Although the above method can reduce the occurrence of partial discharge, it does not reduce the electric field intensity at the maximum value of the electric field, and the fundamental problem has not been solved.

Method used

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  • High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof
  • High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof
  • High-voltage IGBT module capable of weakening partial discharge and manufacturing method thereof

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Embodiment Construction

[0037] The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] The idea of ​​the present invention is to deposit semiconductor hydrogenated amorphous films, such as a-Si:H, a-Ge: H, a-SiGe:H, a-SiC:H, etc. make the upper and lower conductive layers electrically connected, and a small current flows from the collector to the ground when the IGBT module is working. The thickness and doping concentration of the deposited semiconductor hydrogenated amorphous film should be properly controlled, so that the current intensi...

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Abstract

The invention discloses a manufacturing method of a high-voltage IGBT module used for weakening a partial discharge effect, and the high-voltage IGBT module capable of weakening partial discharge. A semiconductor hydrogenation amorphous film deposits between an upper conducting layer and a lower conducting layer of an electric insulation substrate in order to lower the electric field intensity at the conducting layers and the edge of the electric insulation substrate, apparent charges of partial discharge of the IGBT module are lowered, and the passing rate of partial discharge of the module is improved. Therefore, the electric field intensity is obviously weakened at the maximum value of an electric field, the apparent charges of partial discharge are reduced, and the test passing rate of partial discharge of the IGBT module is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a high-voltage IGBT module used for reducing the effect of partial discharge and a high-voltage IGBT module with the behavior of reducing partial discharge. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) has the performance characteristics of high frequency, high voltage, high current, especially easy to turn on and off, and is internationally recognized as the third revolution of power electronics technology. The most representative product has been developed to the sixth generation so far, and the commercialization has been developed to the fifth generation. At present, IGBT has been widely used in various industries of the national economy. [0003] The IGBT module is mainly used in the main circuit inverter of the frequency converter and all inverter circuits, that is, in DC / AC conversion. Today's ne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/66333H01L29/7394H01L23/48H01L2924/0002H01L23/3735H01L23/49844H01L23/60H01L2924/00
Inventor 曹琳
Owner XIAN YONGDIAN ELECTRIC
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