Biosensor based on silicon nanowire tunneling field effect transistor and manufacturing method of biosensor

A technology of tunneling field effect and biosensor, which is applied in the field of biosensor and its preparation based on silicon nanowire tunneling field effect transistor, which can solve the problem of insensitivity to channel surface charge change and achieve steep subthreshold slope, The effect of sensitive and high-sensitivity detection of channel surface charge changes

Active Publication Date: 2014-02-05
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a biosensor based on a silicon nanowire tunneling field-effect transistor and a preparation method thereof, which is used to solve the problem of the common MOS field-effect transistor in the prior art. The problem of insensitivity to changes in surface charge

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  • Biosensor based on silicon nanowire tunneling field effect transistor and manufacturing method of biosensor
  • Biosensor based on silicon nanowire tunneling field effect transistor and manufacturing method of biosensor
  • Biosensor based on silicon nanowire tunneling field effect transistor and manufacturing method of biosensor

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Embodiment 1

[0052] The invention provides a method for preparing a biosensor based on a silicon nanowire tunneling field-effect transistor, and the method for preparing the biosensor at least includes the following steps:

[0053] Step 1, preparing a tunneling field effect transistor with a silicon nanowire channel as a converter;

[0054] Step 2, using a surface modifier to activate and modify the surface of the silicon nanowire channel.

[0055] The preparation method of the silicon nanowire tunneling field-effect transistor-based biosensor provided by the present invention will be described in detail below with reference to specific drawings.

[0056] First, step 1 is performed to prepare a tunneling field effect transistor with a silicon nanowire channel as a converter;

[0057] The specific process of preparing the silicon nanowire tunneling field effect transistor is as follows:

[0058] 1) An SOI substrate is provided, and the SOI substrate includes a top silicon layer, a buried ...

Embodiment 2

[0077] The present invention also provides a biosensor based on a silicon nanowire tunneling field-effect transistor, which is made by using the preparation method provided in Embodiment 1. The biosensor based on a silicon nanowire tunneling field-effect transistor at least includes:

[0078] The converter is a tunneling field effect transistor with a nanowire channel;

[0079] The surface modifier covers the surface of the channel.

[0080] Preferably, the silicon nanowire tunneling field effect transistor at least includes:

[0081] Bottom silicon 13;

[0082] The buried oxide layer 12 is bonded to the surface of the underlying silicon 13;

[0083] a nanowire channel 4 formed on the buried oxide layer 12;

[0084] a source electrode 3 and a drain electrode 2 formed on the buried oxide layer 12 and at both ends of the nanowire channel 4;

[0085] a gate dielectric layer 5 formed on the surface of the nanowire channel 4;

[0086] The back gate 6 is formed on the back side...

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Abstract

The invention provides a biosensor based on a silicon nanowire tunneling field effect transistor and manufacturing method of the biosensor. The method comprises the following steps: step one, manufacturing a tunneling field effect transistor with a silicon nanowire channel as a converter; and step two, carrying out activated modification on the surface of the silicon nanowire channel by adopting a surface modifier; the specific step of preparing the silicon nanowire tunneling field effect transistor in the step one comprises the substeps: providing an SOI (silicon on insulator) substrate comprising a top silicon layer, an oxygen-burying layer and a bottom silicon layer; etching the top silicon layer to form the silicon nanowire channel, depositing a gate medium layer on the surface of the channel, performing ion injection on the top silicon layer by adopting an ion injection process, forming a source electrode and a drain electrode at two ends of the channel, and forming a back gate on the back of the bottom silicon. The tunneling field effect transistor based on the silicon nanowire has a steeper sub-threshold slope, and is more sensitive to the change of the surface charge of the channel, so that the biosensor is capable of detecting the biomolecules with high sensitivity.

Description

technical field [0001] The invention relates to the technical field of biosensing, in particular to a biosensor based on a silicon nanowire tunneling field effect transistor and a preparation method thereof. Background technique [0002] Biosensor is an interdisciplinary subject that combines biologically active materials (enzymes, proteins, DNA, antibodies, antigens, biofilms, etc.) with physical and chemical transducers. The method and monitoring method are also fast and micro-molecular methods at the molecular level of substances. In the future economic development, biosensing technology will be a new growth point between confidence and biotechnology. It has broad application prospects in researches such as protection, biotechnology, and biochips. [0003] Specifically, a biosensor (Biosensor) is an instrument that is sensitive to biological substances and converts its concentration into an electrical signal for detection. It is an analysis tool or system composed of i...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/4146
Inventor 俞文杰刘畅赵清太王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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